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题名: Compare of total-dose irradiation effects between CMOS 4000 and 54HC devices
作者: Wang Gaili; Yu Xuefeng; Ren Diyuan; Zheng Yuzhan; Sun Jing; Wen Lin
刊名: He Jishu/Nuclear Techniques
发表日期: 2008
卷: 31, 期:5, 页:348-351
收录类别: EI
摘要: By irradiating CMOS 4000 and 54HC series gate circuits under different biases, characteristics of total dose radiation responses of the devices were compared and mechanisms of the different radiation effects to the two kinds of circuits were investigated. The radiation tolerance testing methods and evaluating standards of the 54HC devices are discussed.
内容类型: 期刊论文
URI标识: http://ir.xjipc.cas.cn/handle/365002/1938
Appears in Collections:材料物理与化学研究室_期刊论文

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作者单位: Xinjiang Technical Institute of Physics and Chemistry, Urumqi 830011, China

Recommended Citation:
Wang Gaili,Yu Xuefeng,Ren Diyuan,et al. Compare of total-dose irradiation effects between CMOS 4000 and 54HC devices[J]. He Jishu/Nuclear Techniques,2008,31(5):348-351.
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文件名: the compare of total-dose irradiation effects between cmos 4000 and 54hc devices.pdf
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