Compare of total-dose irradiation effects between CMOS 4000 and 54HC devices

XJIPC OpenIR > 材料物理与化学研究室

	Compare of total-dose irradiation effects between CMOS 4000 and 54HC devices
	Wang Gaili; Yu Xuefeng; Ren Diyuan; Zheng Yuzhan; Sun Jing; Wen Lin
	2008
发表期刊	He Jishu/Nuclear Techniques
ISSN	2533219
卷号	31 期号:5 页码:348-351
摘要	By irradiating CMOS 4000 and 54HC series gate circuits under different biases, characteristics of total dose radiation responses of the devices were compared and mechanisms of the different radiation effects to the two kinds of circuits were investigated. The radiation tolerance testing methods and evaluating standards of the 54HC devices are discussed.
收录类别	EI
文献类型	期刊论文
条目标识符	http://ir.xjipc.cas.cn/handle/365002/1938
专题	材料物理与化学研究室
作者单位	Xinjiang Technical Institute of Physics and Chemistry, Urumqi 830011, China
推荐引用方式 GB/T 7714	Wang Gaili,Yu Xuefeng,Ren Diyuan,et al. Compare of total-dose irradiation effects between CMOS 4000 and 54HC devices[J]. He Jishu/Nuclear Techniques,2008,31(5):348-351.
APA	Wang Gaili,Yu Xuefeng,Ren Diyuan,Zheng Yuzhan,Sun Jing,&Wen Lin.(2008).Compare of total-dose irradiation effects between CMOS 4000 and 54HC devices.He Jishu/Nuclear Techniques,31(5),348-351.
MLA	Wang Gaili,et al."Compare of total-dose irradiation effects between CMOS 4000 and 54HC devices".He Jishu/Nuclear Techniques 31.5(2008):348-351.