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Compare of total-dose irradiation effects between CMOS 4000 and 54HC devices
Wang Gaili; Yu Xuefeng; Ren Diyuan; Zheng Yuzhan; Sun Jing; Wen Lin
2008
发表期刊He Jishu/Nuclear Techniques
ISSN2533219
卷号31期号:5页码:348-351
摘要By irradiating CMOS 4000 and 54HC series gate circuits under different biases, characteristics of total dose radiation responses of the devices were compared and mechanisms of the different radiation effects to the two kinds of circuits were investigated. The radiation tolerance testing methods and evaluating standards of the 54HC devices are discussed.
收录类别EI
文献类型期刊论文
条目标识符http://ir.xjipc.cas.cn/handle/365002/1938
专题材料物理与化学研究室
作者单位Xinjiang Technical Institute of Physics and Chemistry, Urumqi 830011, China
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GB/T 7714
Wang Gaili,Yu Xuefeng,Ren Diyuan,et al. Compare of total-dose irradiation effects between CMOS 4000 and 54HC devices[J]. He Jishu/Nuclear Techniques,2008,31(5):348-351.
APA Wang Gaili,Yu Xuefeng,Ren Diyuan,Zheng Yuzhan,Sun Jing,&Wen Lin.(2008).Compare of total-dose irradiation effects between CMOS 4000 and 54HC devices.He Jishu/Nuclear Techniques,31(5),348-351.
MLA Wang Gaili,et al."Compare of total-dose irradiation effects between CMOS 4000 and 54HC devices".He Jishu/Nuclear Techniques 31.5(2008):348-351.
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