| Compare of total-dose irradiation effects between CMOS 4000 and 54HC devices | |
| Wang Gaili; Yu Xuefeng; Ren Diyuan; Zheng Yuzhan; Sun Jing; Wen Lin | |
| 2008 | |
| Source Publication | He Jishu/Nuclear Techniques
 |
| ISSN | 2533219 |
| Volume | 31Issue:5Pages:348-351 |
| Abstract | By irradiating CMOS 4000 and 54HC series gate circuits under different biases, characteristics of total dose radiation responses of the devices were compared and mechanisms of the different radiation effects to the two kinds of circuits were investigated. The radiation tolerance testing methods and evaluating standards of the 54HC devices are discussed. |
| Indexed By | EI |
| Document Type | 期刊论文 |
| Identifier | http://ir.xjipc.cas.cn/handle/365002/1938 |
| Collection | 材料物理与化学研究室 |
| Affiliation | Xinjiang Technical Institute of Physics and Chemistry, Urumqi 830011, China |
| Recommended Citation GB/T 7714 | Wang Gaili,Yu Xuefeng,Ren Diyuan,et al. Compare of total-dose irradiation effects between CMOS 4000 and 54HC devices[J]. He Jishu/Nuclear Techniques,2008,31(5):348-351. |
| APA | Wang Gaili,Yu Xuefeng,Ren Diyuan,Zheng Yuzhan,Sun Jing,&Wen Lin.(2008).Compare of total-dose irradiation effects between CMOS 4000 and 54HC devices.He Jishu/Nuclear Techniques,31(5),348-351. |
| MLA | Wang Gaili,et al."Compare of total-dose irradiation effects between CMOS 4000 and 54HC devices".He Jishu/Nuclear Techniques 31.5(2008):348-351. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| the compare of total（370KB） | 期刊论文 | 作者接受稿 | 开放获取 | CC BY-NC-SA | View Application Full Text | |
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment