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双极晶体管不同温度的退火效应与机理
Alternative Titlethe effect and mechanism of the bipolar junction transistor in different temperature
汪东; 陆妩; 任迪远; 李爱武; 匡治兵; 张华林
2007
Source Publication核电子学与探测技术
ISSN0258-0934
Volume27Issue:1Pages:150-153
Abstract

研究了双极晶体管不同温度下的退火效应,发现双极晶体管的退火与温度有关,而且不同类型晶体管的退火效应是有差异的,最后文章讨论了其中可能的内在机制.

Other Abstract

The annealing-effect of bipolar junction transistor in different temperature is investigated. It is found that the anneal of the bipolar transistor is related to the annealing-temperature, and the annealing-effect of the different type transistor is dissimilar. The possible mechanism is discussed.

Keyword双极晶体管 退火效应 界面态
Indexed ByCSCD
CSCD IDCSCD:2734709
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Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/1931
Collection材料物理与化学研究室
Affiliation中国科学院新疆理化技术研究所;长沙理工大学
Recommended Citation
GB/T 7714
汪东,陆妩,任迪远,等. 双极晶体管不同温度的退火效应与机理[J]. 核电子学与探测技术,2007,27(1):150-153.
APA 汪东,陆妩,任迪远,李爱武,匡治兵,&张华林.(2007).双极晶体管不同温度的退火效应与机理.核电子学与探测技术,27(1),150-153.
MLA 汪东,et al."双极晶体管不同温度的退火效应与机理".核电子学与探测技术 27.1(2007):150-153.
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