XJIPC OpenIR  > 材料物理与化学研究室
Alternative Titleinvestigation of the feasibility and methods of the cmos devices' pre-irradiation screening
李爱武; 余学峰; 任迪远; 汪东; 匡治兵; 牛振红
Source Publication核电子学与探测技术


Other Abstract

The successful pre-irradiation screening must be vitally based on the reversibility of the devices' damage after pre-irradiation and repeatability of the devices' damage by reirradiation, A large number of experiments about 60Co γ total irradiation and anneal have been done to the CMOS devices with different conditions. The irradiation dose, especially the anneal conditions under which the irradiation damage of the devices, after pre-irradiation can be eliminated as soon as possible have been discussed, furthermore, the repeatability of the electric parameter changes of the CMOS devices reirradiated after being annealed has been effectively studied by four turns of irradiation and anneal experiments for CC4007 devices.

KeywordCmos 预辐照 筛选 退火
Indexed ByCSCD
Citation statistics
Document Type期刊论文
Recommended Citation
GB/T 7714
李爱武,余学峰,任迪远,等. CMOS器件预辐照筛选可行性及方法研究[J]. 核电子学与探测技术,2006,26(4):470-473,495.
APA 李爱武,余学峰,任迪远,汪东,匡治兵,&牛振红.(2006).CMOS器件预辐照筛选可行性及方法研究.核电子学与探测技术,26(4),470-473,495.
MLA 李爱武,et al."CMOS器件预辐照筛选可行性及方法研究".核电子学与探测技术 26.4(2006):470-473,495.
Files in This Item:
File Name/Size DocType Version Access License
CMOS器件预辐照筛选可行性及方法研究.(176KB)期刊论文作者接受稿开放获取CC BY-NC-SAView Application Full Text
Related Services
Recommend this item
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[李爱武]'s Articles
[余学峰]'s Articles
[任迪远]'s Articles
Baidu academic
Similar articles in Baidu academic
[李爱武]'s Articles
[余学峰]'s Articles
[任迪远]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[李爱武]'s Articles
[余学峰]'s Articles
[任迪远]'s Articles
Terms of Use
No data!
Social Bookmark/Share
File name: CMOS器件预辐照筛选可行性及方法研究.pdf
Format: Adobe PDF
All comments (0)
No comment.

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.