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Si/SiO2系统的总剂量辐射损伤及辐射感生界面态的能级分布
Alternative Titlethe si/sio2 system's damage and energy band distribution of interface states induced by total dose radiation
余学峰; 张国强; 艾尔肯; 郭旗; 陆妩; 任迪远
2006
Source Publication核电子学与探测技术
ISSN0258-0934
Volume26Issue:3Pages:328-330
Abstract

对比了目前常用的三种用54HC电路制作工艺制作的MOS电容的总剂量辐射实验结果,并从微观氧化物电荷、界面态的感生变化及其界面态的能量分布变化等角度,研究了在不同制作工艺条件下,54HC电路Si/SiO2系统总剂量辐射损伤特性。

Other Abstract

Responses of three kinds of MOS capacitors to the total dose radiation have been compared and studied. The characteristic and mechanism of the radiation inducing damage in the Si/SiO2 system were explored from the view of the generation of the oxide charges and interface states, and, especially, the change of the energy band of interface states.

KeywordMos电容 氧化物电荷 界面态 能级分布
Indexed ByCSCD
CSCD IDCSCD:0258-0934
Citation statistics
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/1915
Collection材料物理与化学研究室
Affiliation中国科学院新疆理化技术研究所
Recommended Citation
GB/T 7714
余学峰,张国强,艾尔肯,等. Si/SiO2系统的总剂量辐射损伤及辐射感生界面态的能级分布[J]. 核电子学与探测技术,2006,26(3):328-330.
APA 余学峰,张国强,艾尔肯,郭旗,陆妩,&任迪远.(2006).Si/SiO2系统的总剂量辐射损伤及辐射感生界面态的能级分布.核电子学与探测技术,26(3),328-330.
MLA 余学峰,et al."Si/SiO2系统的总剂量辐射损伤及辐射感生界面态的能级分布".核电子学与探测技术 26.3(2006):328-330.
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