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Alternative Titlethe si/sio2 system's damage and energy band distribution of interface states induced by total dose radiation
余学峰; 张国强; 艾尔肯; 郭旗; 陆妩; 任迪远
Source Publication核电子学与探测技术


Other Abstract

Responses of three kinds of MOS capacitors to the total dose radiation have been compared and studied. The characteristic and mechanism of the radiation inducing damage in the Si/SiO2 system were explored from the view of the generation of the oxide charges and interface states, and, especially, the change of the energy band of interface states.

KeywordMos电容 氧化物电荷 界面态 能级分布
Indexed ByCSCD
CSCD IDCSCD:0258-0934
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Document Type期刊论文
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GB/T 7714
余学峰,张国强,艾尔肯,等. Si/SiO2系统的总剂量辐射损伤及辐射感生界面态的能级分布[J]. 核电子学与探测技术,2006,26(3):328-330.
APA 余学峰,张国强,艾尔肯,郭旗,陆妩,&任迪远.(2006).Si/SiO2系统的总剂量辐射损伤及辐射感生界面态的能级分布.核电子学与探测技术,26(3),328-330.
MLA 余学峰,et al."Si/SiO2系统的总剂量辐射损伤及辐射感生界面态的能级分布".核电子学与探测技术 26.3(2006):328-330.
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