材料物理与化学研究室知识库

用Co60作γ辐照源对InSb光伏二极管列阵和InSb凝视红外焦平面器件进行了高能辐照损伤实验。在5000rad剂量下观测到二极管优值因子RoA下降了一个数量级,从3.6×105～4.3×105??cm2下降到2.5×104～2.7×104??cm2。在10000rad及以上剂量观测到64×64元凝视焦平面热成像性能的显著退化。

Experimental investigation of irradiation damage to InSb photodiode arrays and to 64 * 64 InSb infrared focal plane arrays have been carried out by using Co^60 as pray sources. A reduction of one order of magnitude of RoA, the figure of merit of the diodes, from 3.6 * 10^5～4.3 * 10^5Omega·cm^2 down to 2.5 * 10^4～ 2.7* 10^4 Omega·cm^2 was observed after a total dose of 5000 rad irradiation. Also, significant degradation of thermal imaging ability for 64 * 64 InSb staring focal plane arrays after total dose of 10000 rad irradiation or more was observed.