XJIPC OpenIR  > 材料物理与化学研究室
Alternative Titlephysical and electrical properties of the high-k dielectrics with ni and al inclusion in hfo2
武德起; 姚金城; 赵红生; 张东炎; 常爱民; 李锋; 周阳
Source Publication功能材料与器件学报


Other Abstract

The thermal stability and the resistance to oxygen diffusion of (HfO2)x (Al2O3)y (NiO)1-x-y gate dielectrics deposited on p-type Si (100) substrate by laser molecular beam epitaxy technique (LMBE) have been investigated. X-ray diffraction (XRD) results indicate that the crystallization temperature sig-nificantly increases with Ni and Al added into the HfO2 film. Atomic force microscopy (AFM) testing shows that the surface of these films after annealing in N2 is continuous and flat at the atomic level with no pinhole observed. No silicate interracial layer is found in the high-resolution cross-section transmission electron microscope (HRTEM) images of the (HfO2)x( Al2O3)y(NiO)1-x-y films after 900℃ annealing in N2. It is indicated that the interposed layer of Ni-Al- O between the oxide film and the Si substrate ena-scale.

Keyword高介电栅介质材料 激光分子束外延 二氧化铪
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GB/T 7714
武德起,姚金城,赵红生,等. 高介电栅介质材料HfO2掺杂后的物理电学特性(英文)[J]. 功能材料与器件学报,2009,15(1):71-74.
APA 武德起.,姚金城.,赵红生.,张东炎.,常爱民.,...&周阳.(2009).高介电栅介质材料HfO2掺杂后的物理电学特性(英文).功能材料与器件学报,15(1),71-74.
MLA 武德起,et al."高介电栅介质材料HfO2掺杂后的物理电学特性(英文)".功能材料与器件学报 15.1(2009):71-74.
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