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ELDRS and dose-rate dependence of vertical NPN transistor
Zheng Yu-Zhan; Lu Wu; Ren Di-Yuan; Wang Gai-Li; Yu Xue-Feng; Guo Qi
2009
Source PublicationCHINESE PHYSICS C
ISSN1674-1137
Volume33Issue:1Pages:47-49
AbstractThe enhanced low-dose-rate sensitivity (ELDRS) and dose-rate dependence of vertical NPN transistors are investigated in this article. The results show that; the vertical NPN transistors exhibit more degradation at low dose rate, and that this degradation is attributed to the increase on base current. The oxide trapped positive charge near the SiO(2)-Si interface and interface traps at the interface can contribute to the increase on base current and the two-stage hydrogen mechanism associated with space charge effect can well explain the experimental results.
KeywordBipolar Junction Transistor Eldrs Effect Dose-rate Dependence
Subject AreaPhysics
Indexed BySCI
WOS IDWOS:000262408400010
Citation statistics
Cited Times:2[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/1892
Collection材料物理与化学研究室
AffiliationChinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China; Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China
Recommended Citation
GB/T 7714
Zheng Yu-Zhan,Lu Wu,Ren Di-Yuan,et al. ELDRS and dose-rate dependence of vertical NPN transistor[J]. CHINESE PHYSICS C,2009,33(1):47-49.
APA Zheng Yu-Zhan,Lu Wu,Ren Di-Yuan,Wang Gai-Li,Yu Xue-Feng,&Guo Qi.(2009).ELDRS and dose-rate dependence of vertical NPN transistor.CHINESE PHYSICS C,33(1),47-49.
MLA Zheng Yu-Zhan,et al."ELDRS and dose-rate dependence of vertical NPN transistor".CHINESE PHYSICS C 33.1(2009):47-49.
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