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学科主题: Physics
题名: ELDRS and dose-rate dependence of vertical NPN transistor
作者: Zheng Yu-Zhan; Lu Wu; Ren Di-Yuan; Wang Gai-Li; Yu Xue-Feng; Guo Qi
关键词: bipolar junction transistor ; ELDRS effect ; dose-rate dependence
刊名: CHINESE PHYSICS C
发表日期: 2009
卷: 33, 期:1, 页:47-49
收录类别: SCI
摘要: The enhanced low-dose-rate sensitivity (ELDRS) and dose-rate dependence of vertical NPN transistors are investigated in this article. The results show that; the vertical NPN transistors exhibit more degradation at low dose rate, and that this degradation is attributed to the increase on base current. The oxide trapped positive charge near the SiO(2)-Si interface and interface traps at the interface can contribute to the increase on base current and the two-stage hydrogen mechanism associated with space charge effect can well explain the experimental results.
内容类型: 期刊论文
URI标识: http://ir.xjipc.cas.cn/handle/365002/1892
Appears in Collections:材料物理与化学研究室_期刊论文

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作者单位: Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China; Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China

Recommended Citation:
Zheng Yu-Zhan,Lu Wu,Ren Di-Yuan,et al. ELDRS and dose-rate dependence of vertical NPN transistor[J]. CHINESE PHYSICS C,2009,33(1):47-49.
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