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ELDRS and dose-rate dependence of vertical NPN transistor
Zheng Yu-Zhan; Lu Wu; Ren Di-Yuan; Wang Gai-Li; Yu Xue-Feng; Guo Qi
2009
发表期刊CHINESE PHYSICS C
ISSN1674-1137
卷号33期号:1页码:47-49
摘要The enhanced low-dose-rate sensitivity (ELDRS) and dose-rate dependence of vertical NPN transistors are investigated in this article. The results show that; the vertical NPN transistors exhibit more degradation at low dose rate, and that this degradation is attributed to the increase on base current. The oxide trapped positive charge near the SiO(2)-Si interface and interface traps at the interface can contribute to the increase on base current and the two-stage hydrogen mechanism associated with space charge effect can well explain the experimental results.
关键词Bipolar Junction Transistor Eldrs Effect Dose-rate Dependence
学科领域Physics
收录类别SCI
WOS记录号WOS:000262408400010
引用统计
被引频次:2[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.xjipc.cas.cn/handle/365002/1892
专题材料物理与化学研究室
作者单位Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China; Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China
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GB/T 7714
Zheng Yu-Zhan,Lu Wu,Ren Di-Yuan,et al. ELDRS and dose-rate dependence of vertical NPN transistor[J]. CHINESE PHYSICS C,2009,33(1):47-49.
APA Zheng Yu-Zhan,Lu Wu,Ren Di-Yuan,Wang Gai-Li,Yu Xue-Feng,&Guo Qi.(2009).ELDRS and dose-rate dependence of vertical NPN transistor.CHINESE PHYSICS C,33(1),47-49.
MLA Zheng Yu-Zhan,et al."ELDRS and dose-rate dependence of vertical NPN transistor".CHINESE PHYSICS C 33.1(2009):47-49.
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