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学科主题: Physics
题名: Characteristics of high- and low-dose-rate damage for domestic npn transistors of various emitter areas
作者: Zheng Yu-Zhan; Lu Wu; Ren Di-Yuan; Wang Yi-Yuan; Guo Qi; Yu Xue-Feng; He Cheng-Fa
通讯作者: Lu, W
关键词: emitter area ; domestic npn transistors ; dose rate ; radiation damage
刊名: ACTA PHYSICA SINICA
发表日期: 2009
卷: 58, 期:8, 页:5572-5577
收录类别: SCI
资助者: Foundation of State Key Laboratory of Integrated Analog Circuits, China
摘要: There are many factors such as process technologies, dose rates and biased conditions which can affect radiation damage in npn transistors. High- and low-dose-rate radiation response of domestic npn transistors with three kinds of emitter areas were investigated in this article. The influence of emitter area on radiation damage was analyzed. The results show that the degradation of current gain was more severe at low dose rate, i.e. enhanced low-dose-rate sensitivity. Furthermore, radiation damage was more apparent at low current injection. Through the comparison of radiation damage for different emitter areas, it was found that greater peri meter-to-area ratio (P/A) would cause greater normalized excess base current (I(B)/I(BD)). The damage mechanism for npn transistors is explained in detail, and the radiation hardness assurance is explored with respect to the emitter area and operating voltage of npn transistors.
内容类型: 期刊论文
URI标识: http://ir.xjipc.cas.cn/handle/365002/1882
Appears in Collections:材料物理与化学研究室_期刊论文

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作者单位: Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China;Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China

Recommended Citation:
Zheng Yu-Zhan,Lu Wu,Ren Di-Yuan,et al. Characteristics of high- and low-dose-rate damage for domestic npn transistors of various emitter areas[J]. ACTA PHYSICA SINICA,2009,58(8):5572-5577.
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文件名: characteristics of high- and low-dose-rate damage for domestic npn transistors of various emitter areas.pdf
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