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Characteristics of high- and low-dose-rate damage for domestic npn transistors of various emitter areas
Zheng Yu-Zhan; Lu Wu; Ren Di-Yuan; Wang Yi-Yuan; Guo Qi; Yu Xue-Feng; He Cheng-Fa
2009
Source PublicationACTA PHYSICA SINICA
ISSN1000-3290
Volume58Issue:8Pages:5572-5577
Abstract

There are many factors such as process technologies, dose rates and biased conditions which can affect radiation damage in npn transistors. High- and low-dose-rate radiation response of domestic npn transistors with three kinds of emitter areas were investigated in this article. The influence of emitter area on radiation damage was analyzed. The results show that the degradation of current gain was more severe at low dose rate, i.e. enhanced low-dose-rate sensitivity. Furthermore, radiation damage was more apparent at low current injection. Through the comparison of radiation damage for different emitter areas, it was found that greater peri meter-to-area ratio (P/A) would cause greater normalized excess base current (I(B)/I(BD)). The damage mechanism for npn transistors is explained in detail, and the radiation hardness assurance is explored with respect to the emitter area and operating voltage of npn transistors.

KeywordEmitter Area Domestic Npn Transistors Dose Rate Radiation Damage
Subject AreaPhysics
Indexed BySCI
WOS IDWOS:000269228600068
Citation statistics
Cited Times:14[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/1882
Collection材料物理与化学研究室
Corresponding AuthorLu Wu
AffiliationChinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China;Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China
Recommended Citation
GB/T 7714
Zheng Yu-Zhan,Lu Wu,Ren Di-Yuan,et al. Characteristics of high- and low-dose-rate damage for domestic npn transistors of various emitter areas[J]. ACTA PHYSICA SINICA,2009,58(8):5572-5577.
APA Zheng Yu-Zhan.,Lu Wu.,Ren Di-Yuan.,Wang Yi-Yuan.,Guo Qi.,...&He Cheng-Fa.(2009).Characteristics of high- and low-dose-rate damage for domestic npn transistors of various emitter areas.ACTA PHYSICA SINICA,58(8),5572-5577.
MLA Zheng Yu-Zhan,et al."Characteristics of high- and low-dose-rate damage for domestic npn transistors of various emitter areas".ACTA PHYSICA SINICA 58.8(2009):5572-5577.
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