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Characteristics of high- and low-dose-rate damage for domestic npn transistors of various emitter areas
Zheng Yu-Zhan; Lu Wu; Ren Di-Yuan; Wang Yi-Yuan; Guo Qi; Yu Xue-Feng; He Cheng-Fa; Lu, W
2009
发表期刊ACTA PHYSICA SINICA
ISSN1000-3290
卷号58期号:8页码:5572-5577
摘要There are many factors such as process technologies, dose rates and biased conditions which can affect radiation damage in npn transistors. High- and low-dose-rate radiation response of domestic npn transistors with three kinds of emitter areas were investigated in this article. The influence of emitter area on radiation damage was analyzed. The results show that the degradation of current gain was more severe at low dose rate, i.e. enhanced low-dose-rate sensitivity. Furthermore, radiation damage was more apparent at low current injection. Through the comparison of radiation damage for different emitter areas, it was found that greater peri meter-to-area ratio (P/A) would cause greater normalized excess base current (I(B)/I(BD)). The damage mechanism for npn transistors is explained in detail, and the radiation hardness assurance is explored with respect to the emitter area and operating voltage of npn transistors.
关键词Emitter Area Domestic Npn Transistors Dose Rate Radiation Damage
学科领域Physics
收录类别SCI
WOS记录号WOS:000269228600068
引用统计
被引频次:13[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.xjipc.cas.cn/handle/365002/1882
专题材料物理与化学研究室
通讯作者Lu, W
作者单位Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China;Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China
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GB/T 7714
Zheng Yu-Zhan,Lu Wu,Ren Di-Yuan,et al. Characteristics of high- and low-dose-rate damage for domestic npn transistors of various emitter areas[J]. ACTA PHYSICA SINICA,2009,58(8):5572-5577.
APA Zheng Yu-Zhan.,Lu Wu.,Ren Di-Yuan.,Wang Yi-Yuan.,Guo Qi.,...&Lu, W.(2009).Characteristics of high- and low-dose-rate damage for domestic npn transistors of various emitter areas.ACTA PHYSICA SINICA,58(8),5572-5577.
MLA Zheng Yu-Zhan,et al."Characteristics of high- and low-dose-rate damage for domestic npn transistors of various emitter areas".ACTA PHYSICA SINICA 58.8(2009):5572-5577.
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