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题名: Radiation effect of NPN BJTs under various base doping conditions
作者: Xi Shan-Bin; Lu Wu; Zheng Yu-Zhan; Xu Fa-Yue; Zhou Dong; Li Ming; Wang Fei; Wang Zhi-Kuan; Yang Yong-Hui
刊名: Yuanzineng Kexue Jishu/Atomic Energy Science and Technology
发表日期: 2010
卷: 44, 期:UPPL. 1, 页:533-537
收录类别: EI
摘要: 60Co γ radiation effects and annealing behaviors of domestic NPN bipolar junction transistors with the same process technology but different base doping concentrations were investigated. It is shown that transistors with different base doping concentrations make the different responses of high and low dose rate radiation. More degradation can be seen in the lightly-doped base PNP transistors than the heavily-doped base PNP transistors.
内容类型: 期刊论文
URI标识: http://ir.xjipc.cas.cn/handle/365002/1832
Appears in Collections:材料物理与化学研究室_期刊论文

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不同基区掺杂浓度NPN双极晶体管电离辐照效应.pdf(1008KB)期刊论文作者接受稿开放获取View 联系获取全文

作者单位: Xinjiang Technical Institute of Physics and Chemistry, Chinese Acad. of Sci., Urumqi 830011, China;Xinjiang Key Laboratory of Electronic Information Materials and Devices, Urumqi 830011, China;Graduate University of Chinese Acad. of Sci., Beijing 100049, China;National Key Laboratory of Analog Integrated Circuit, Chongqing 400060, China

Recommended Citation:
Xi Shan-Bin,Lu Wu,Zheng Yu-Zhan,et al. Radiation effect of NPN BJTs under various base doping conditions[J]. Yuanzineng Kexue Jishu/Atomic Energy Science and Technology,2010,44(UPPL. 1):533-537.
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文件名: 不同基区掺杂浓度NPN双极晶体管电离辐照效应.pdf
格式: Adobe PDF
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