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Radiation effect of NPN BJTs under various base doping conditions
Xi Shan-Bin; Lu Wu; Zheng Yu-Zhan; Xu Fa-Yue; Zhou Dong; Li Ming; Wang Fei; Wang Zhi-Kuan; Yang Yong-Hui
2010
发表期刊Yuanzineng Kexue Jishu/Atomic Energy Science and Technology
ISSN10006931
卷号44期号:UPPL. 1页码:533-537
摘要60Co γ radiation effects and annealing behaviors of domestic NPN bipolar junction transistors with the same process technology but different base doping concentrations were investigated. It is shown that transistors with different base doping concentrations make the different responses of high and low dose rate radiation. More degradation can be seen in the lightly-doped base PNP transistors than the heavily-doped base PNP transistors.
收录类别EI
文献类型期刊论文
条目标识符http://ir.xjipc.cas.cn/handle/365002/1832
专题材料物理与化学研究室
作者单位Xinjiang Technical Institute of Physics and Chemistry, Chinese Acad. of Sci., Urumqi 830011, China;Xinjiang Key Laboratory of Electronic Information Materials and Devices, Urumqi 830011, China;Graduate University of Chinese Acad. of Sci., Beijing 100049, China;National Key Laboratory of Analog Integrated Circuit, Chongqing 400060, China
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Xi Shan-Bin,Lu Wu,Zheng Yu-Zhan,et al. Radiation effect of NPN BJTs under various base doping conditions[J]. Yuanzineng Kexue Jishu/Atomic Energy Science and Technology,2010,44(UPPL. 1):533-537.
APA Xi Shan-Bin.,Lu Wu.,Zheng Yu-Zhan.,Xu Fa-Yue.,Zhou Dong.,...&Yang Yong-Hui.(2010).Radiation effect of NPN BJTs under various base doping conditions.Yuanzineng Kexue Jishu/Atomic Energy Science and Technology,44(UPPL. 1),533-537.
MLA Xi Shan-Bin,et al."Radiation effect of NPN BJTs under various base doping conditions".Yuanzineng Kexue Jishu/Atomic Energy Science and Technology 44.UPPL. 1(2010):533-537.
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