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题名: Dose-rate effects of p-channel metal oxide semiconductor field-effect transistors at various biasing conditions
作者: Bo Lan; Qi Guo; Jing Sun; Jiangwei Cui; Maoshun Li; Rui Chen; Wuxiong Fei; Yun Zhao
刊名: Journal of Semiconductors
发表日期: 2010
DOI: 10.1088/1674-4926/31/5/054004
卷: 31, 期:5, 页:0540041-0540044
收录类别: EI
摘要: The total-dose response and annealing effect of p-channel metal oxide semiconductor field-effect transistors (PMOSFETs) were investigated at various dose rates and biasing conditions. The results show that the shift of threshold voltage is more obvious when the dose rate is decreased. Under the various dose rates and biasing conditions, some have exhibited a time-dependent effect and others showed enhanced low-dose-rate sensitivity (ELDRS). Finally, using the subthreshold-separating method, the threshold-voltage shift is separated into shifts due to interface states and oxide-trapped charges, and the underlying mechanisms of the observed effects are discussed. It has been indicated that the ELDRS effect results from the different quantities of the interface states generated at high and low dose rates.
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内容类型: 期刊论文
URI标识: http://ir.xjipc.cas.cn/handle/365002/1828
Appears in Collections:材料物理与化学研究室_期刊论文

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作者单位: Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;Xinjiang Key Laboratory of Electronic Information Materials and Devices, Urumqi 830011, China;Graduate University, Chinese Academy of Sciences, Beijing 100049, China

Recommended Citation:
Bo Lan,Qi Guo,Jing Sun,et al. Dose-rate effects of p-channel metal oxide semiconductor field-effect transistors at various biasing conditions[J]. Journal of Semiconductors,2010,31(5):0540041-0540044.
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文件名: dose-rate effects of p-channel metal oxide semiconductor field-effect transistors at various biasing conditions.pdf
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