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Dose-rate effects of p-channel metal oxide semiconductor field-effect transistors at various biasing conditions
Bo Lan; Qi Guo; Jing Sun; Jiangwei Cui; Maoshun Li; Rui Chen; Wuxiong Fei; Yun Zhao
2010
发表期刊Journal of Semiconductors
ISSN16744926
卷号31期号:5页码:0540041-0540044
摘要The total-dose response and annealing effect of p-channel metal oxide semiconductor field-effect transistors (PMOSFETs) were investigated at various dose rates and biasing conditions. The results show that the shift of threshold voltage is more obvious when the dose rate is decreased. Under the various dose rates and biasing conditions, some have exhibited a time-dependent effect and others showed enhanced low-dose-rate sensitivity (ELDRS). Finally, using the subthreshold-separating method, the threshold-voltage shift is separated into shifts due to interface states and oxide-trapped charges, and the underlying mechanisms of the observed effects are discussed. It has been indicated that the ELDRS effect results from the different quantities of the interface states generated at high and low dose rates.
DOI10.1088/1674-4926/31/5/054004
收录类别EI
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文献类型期刊论文
条目标识符http://ir.xjipc.cas.cn/handle/365002/1828
专题材料物理与化学研究室
作者单位Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;Xinjiang Key Laboratory of Electronic Information Materials and Devices, Urumqi 830011, China;Graduate University, Chinese Academy of Sciences, Beijing 100049, China
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GB/T 7714
Bo Lan,Qi Guo,Jing Sun,et al. Dose-rate effects of p-channel metal oxide semiconductor field-effect transistors at various biasing conditions[J]. Journal of Semiconductors,2010,31(5):0540041-0540044.
APA Bo Lan.,Qi Guo.,Jing Sun.,Jiangwei Cui.,Maoshun Li.,...&Yun Zhao.(2010).Dose-rate effects of p-channel metal oxide semiconductor field-effect transistors at various biasing conditions.Journal of Semiconductors,31(5),0540041-0540044.
MLA Bo Lan,et al."Dose-rate effects of p-channel metal oxide semiconductor field-effect transistors at various biasing conditions".Journal of Semiconductors 31.5(2010):0540041-0540044.
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