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Dose-rate effects of p-channel metal oxide semiconductor field-effect transistors at various biasing conditions
Bo Lan; Qi Guo; Jing Sun; Jiangwei Cui; Maoshun Li; Rui Chen; Wuxiong Fei; Yun Zhao
2010
Source PublicationJournal of Semiconductors
ISSN16744926
Volume31Issue:5Pages:0540041-0540044
AbstractThe total-dose response and annealing effect of p-channel metal oxide semiconductor field-effect transistors (PMOSFETs) were investigated at various dose rates and biasing conditions. The results show that the shift of threshold voltage is more obvious when the dose rate is decreased. Under the various dose rates and biasing conditions, some have exhibited a time-dependent effect and others showed enhanced low-dose-rate sensitivity (ELDRS). Finally, using the subthreshold-separating method, the threshold-voltage shift is separated into shifts due to interface states and oxide-trapped charges, and the underlying mechanisms of the observed effects are discussed. It has been indicated that the ELDRS effect results from the different quantities of the interface states generated at high and low dose rates.
DOI10.1088/1674-4926/31/5/054004
Indexed ByEI
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Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/1828
Collection材料物理与化学研究室
AffiliationXinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;Xinjiang Key Laboratory of Electronic Information Materials and Devices, Urumqi 830011, China;Graduate University, Chinese Academy of Sciences, Beijing 100049, China
Recommended Citation
GB/T 7714
Bo Lan,Qi Guo,Jing Sun,et al. Dose-rate effects of p-channel metal oxide semiconductor field-effect transistors at various biasing conditions[J]. Journal of Semiconductors,2010,31(5):0540041-0540044.
APA Bo Lan.,Qi Guo.,Jing Sun.,Jiangwei Cui.,Maoshun Li.,...&Yun Zhao.(2010).Dose-rate effects of p-channel metal oxide semiconductor field-effect transistors at various biasing conditions.Journal of Semiconductors,31(5),0540041-0540044.
MLA Bo Lan,et al."Dose-rate effects of p-channel metal oxide semiconductor field-effect transistors at various biasing conditions".Journal of Semiconductors 31.5(2010):0540041-0540044.
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