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不同发射极面积npn晶体管高低剂量率辐射损伤特性
Alternative Titlecharacteristics of high- and low-dose-rate damage for domestic npn transistors of various emitter areas
郑玉展; 陆妩; 任迪远; 王义元; 郭旗; 余学锋; 何承发
2009
Source Publication物理学报
ISSN1000-3290
Volume58Issue:8Pages:5572-5577
Abstract

影响npn晶体管辐射损伤的因素有很多,如晶体管工艺、剂量率以及辐照偏置等.主要研究了三种发射极面积的国产npn晶体管在高低剂量率下的辐射损伤特性,分析了发射极尺寸对辐射损伤的影响.研究结果表明,国产npn晶体管具有低剂量率损伤增强效应,且发现当小电流注入下晶体管的辐射损伤会表现得愈加显著.比较三种发射极尺寸的晶体管辐照响应发现,发射极周长面积比P/A越大时晶体管归一化过剩基极电流ΔIB/IB0也越大.详细阐述了npn晶体管辐射损伤机制,从发射极尺寸和晶体管工作电压角度对npn晶体管的加固保证方法进行了探索.

Keyword发射极面积 国产npn晶体管 剂量率 辐射损伤
Indexed BySCI ; CSCD
CSCD IDCSCD:3748450
Citation statistics
Cited Times:18[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/1795
Collection材料物理与化学研究室
Corresponding Author陆妩
Affiliation中国科学院新疆理化技术研究所;中国科学院研究生院
Recommended Citation
GB/T 7714
郑玉展,陆妩,任迪远,等. 不同发射极面积npn晶体管高低剂量率辐射损伤特性[J]. 物理学报,2009,58(8):5572-5577.
APA 郑玉展.,陆妩.,任迪远.,王义元.,郭旗.,...&何承发.(2009).不同发射极面积npn晶体管高低剂量率辐射损伤特性.物理学报,58(8),5572-5577.
MLA 郑玉展,et al."不同发射极面积npn晶体管高低剂量率辐射损伤特性".物理学报 58.8(2009):5572-5577.
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