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剂量率对PMOS剂量计辐射响应的影响
Alternative Titleinfluence of dose rate on radiation response of pmosfet dosimeter
孙静; 郭旗; 张军; 任迪远; 陆妩; 余学锋; 文林; 王改丽; 郑玉展
2009
Source Publication微电子学
ISSN1004-3365
Volume39Issue:1Pages:128-131
Abstract

研究了不同剂量率下PMOS剂量计阈值电压的响应。在VTH偏置下,观察了剂量率对PMOS剂量计辐射响应线性度和灵敏度的影响规律及其退火特性。试验结果表明:随着剂量率降低,n值趋近于1,表现出较好的线性度,响应灵敏度也增加。分析认为,PMOS剂量计有明显的低剂量率辐射敏感增强效应(ELDRS),对其损伤机理作了进一步的讨论。

KeywordPmosfet 剂量计 剂量率 阈值响应 灵敏度
Indexed ByCSCD
CSCD IDCSCD:3524618
Citation statistics
Cited Times:4[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/1765
Collection材料物理与化学研究室
Affiliation新疆大学物理科学与技术学院;中国科学院新疆理化技术研究所;中国科学院研究生院
Recommended Citation
GB/T 7714
孙静,郭旗,张军,等. 剂量率对PMOS剂量计辐射响应的影响[J]. 微电子学,2009,39(1):128-131.
APA 孙静.,郭旗.,张军.,任迪远.,陆妩.,...&郑玉展.(2009).剂量率对PMOS剂量计辐射响应的影响.微电子学,39(1),128-131.
MLA 孙静,et al."剂量率对PMOS剂量计辐射响应的影响".微电子学 39.1(2009):128-131.
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