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Au和Ni掺杂n型硅材料的制备及其热敏特性
董茂进; 陈朝阳; 范艳伟; 丛秀云; 王军华; 陶明德
2009
Source Publication功能材料
ISSN1001-9731
Volume40Issue:1Pages:37-39
Abstract

为了制备高B低阻的硅单晶热敏材料,采用开管涂源的方法,对n型单晶硅进行Au、Ni两种过渡族金属的双重高温掺杂,得到对温度敏感的补偿硅材料,并对其进行测试和分析。掺杂后得到的硅单晶热敏材料,其导电类型仍为n型,且电阻率较低,为欠补偿,测试结果表明其常温电阻率2ρ5=64~416Ω.cm,温度敏感系数(B值)在5300K左右;根据半导体中深能级杂质理论推导计算得到的材料的B值,与实验值基本一致。

Other Abstract

In order to obtaln the low resistance and high B-value crystal silicon material, smearlng Au and Ni impurities were doped ln n-type silicon and were put ln openlng environment to heart. The thermal-sensitive silicon material is obtalned. The characteristics of the material are measured and analyzed. It is shown that the electrical resistivity of the material is low, and it is still n-type, low compensated, the electrical resistivities are ρ25=64-416 Ω·cm under room temperature, the B-values are about 5300 K. The B-value calculated by the theory of the semiconductor deep level energy is basically identical with the test value.

Keyword双重掺杂 深能级杂质 Au Ni 热敏特性
Indexed ByCSCD
CSCD IDCSCD:3490592
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Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/1761
Collection材料物理与化学研究室
Affiliation中国科学院新疆理化技术研究所;中国科学院研究生院
Recommended Citation
GB/T 7714
董茂进,陈朝阳,范艳伟,等. Au和Ni掺杂n型硅材料的制备及其热敏特性[J]. 功能材料,2009,40(1):37-39.
APA 董茂进,陈朝阳,范艳伟,丛秀云,王军华,&陶明德.(2009).Au和Ni掺杂n型硅材料的制备及其热敏特性.功能材料,40(1),37-39.
MLA 董茂进,et al."Au和Ni掺杂n型硅材料的制备及其热敏特性".功能材料 40.1(2009):37-39.
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