国产工艺的部分耗尽SOI PMOSFET总剂量辐照及退火效应研究
崔江维; 余学峰; 刘刚; 李茂顺; 高博; 兰博; 赵云; 费武雄; 陈睿
2010
Source Publication原子能科学技术
ISSN1000-6931
Volume44Issue:11Pages:1385-1389
Abstract

对国产工艺的部分耗尽SOIPMOSFET60Coγ射线的总剂量辐照及退火效应进行了研究。结果表明:随着工艺技术的发展,正栅氧化层具有较强的抗辐照加固能力,背栅由于埋氧层厚度和工艺生长原因而对总剂量辐照较为敏感;辐照引入的深能级界面态陷阱电荷的散射作用,导致了正栅源漏饱和电流的显著降低;退火过程中界面态陷阱电荷的饱和决定了正栅亚阈曲线的平衡位置,而隧穿或热发射的电子只能中和部分背栅氧化物陷阱电荷,使得退火后背栅曲线仍与初始值有一定负向距离。

Other Abstract

Total dose irradiation and annealing effects of domestic partially-depleted SOI PMOSFET were studied. It is found that the back gate is more sensitive to total dose irradiation. It is the deep level interface traps that mainly decrease the saturated current. During annealing, it is the interface traps that determine the balance position of the top gate sub-threshold curve. While the tunneling and thermal emission electrons can only neutralize parts of the oxide traps in the buried oxide, making the back gate sub-threshold curve negatively away from the original one after a long time annealing.

Keyword总剂量辐照效应 退火 亚阈曲线
Indexed ByCSCD
CSCD IDCSCD:4064147
Citation statistics
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/1754
Collection新疆维吾尔自治区电子信息材料与器件重点实验室
材料物理与化学研究室
Corresponding Author余学峰
Affiliation中国科学院新疆理化技术研究所;新疆电子信息材料与器件重点实验室;中国科学院研究生院;中国科学院微电子研究所
Recommended Citation
GB/T 7714
崔江维,余学峰,刘刚,等. 国产工艺的部分耗尽SOI PMOSFET总剂量辐照及退火效应研究[J]. 原子能科学技术,2010,44(11):1385-1389.
APA 崔江维.,余学峰.,刘刚.,李茂顺.,高博.,...&陈睿.(2010).国产工艺的部分耗尽SOI PMOSFET总剂量辐照及退火效应研究.原子能科学技术,44(11),1385-1389.
MLA 崔江维,et al."国产工艺的部分耗尽SOI PMOSFET总剂量辐照及退火效应研究".原子能科学技术 44.11(2010):1385-1389.
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