国产工艺的部分耗尽SOI MOSFET总剂量辐照效应及可靠性
崔江维; 余学峰; 刘刚; 李茂顺; 兰博; 赵云; 费武雄; 陈睿
2010
Source Publication原子能科学技术
ISSN1000-6931
Volume44Issue:10Pages:1257-1261
Abstract

对国产工艺的部分耗尽SOIMOSFET60Coγ射线的总剂量辐照效应及其可靠性进行了研究。结果表明:辐照引入的氧化物陷阱电荷是阈值电压漂移的主要因素;背栅对总剂量辐照更为敏感,但在背栅特性漂移未超出一定范围的情况下,依然是正栅氧化层质量决定了器件的抗辐照性能;界面态陷阱电荷的散射作用降低了器件的源漏饱和电流;总剂量辐照后器件的常规可靠性可能会降低。

Other Abstract

Total dose irradiation effect and reliability of domestic partially-depleted SOI MOSFET were studied. It is found that the oxide-trapped charge mainly causes the threshold voltage shift. The back gate is more sensitive to the total dose irradiation than the top gate, while it is still the top gate that determines the radiation performance of the device as the back gate shifts within a certain scope. The descendent of the saturated current results from the action of the interface-trap charge. It is also believed that the total dose irradiation will lower the device reliability.

Keyword总剂量辐照效应 退火效应 可靠性
Indexed ByCSCD
CSCD IDCSCD:4064124
Citation statistics
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/1746
Collection新疆维吾尔自治区电子信息材料与器件重点实验室
材料物理与化学研究室
Affiliation中国科学院新疆理化技术研究所;新疆电子信息材料与器件重点实验室;中国科学院研究生院;中国科学院微电子研究所
Recommended Citation
GB/T 7714
崔江维,余学峰,刘刚,等. 国产工艺的部分耗尽SOI MOSFET总剂量辐照效应及可靠性[J]. 原子能科学技术,2010,44(10):1257-1261.
APA 崔江维.,余学峰.,刘刚.,李茂顺.,兰博.,...&陈睿.(2010).国产工艺的部分耗尽SOI MOSFET总剂量辐照效应及可靠性.原子能科学技术,44(10),1257-1261.
MLA 崔江维,et al."国产工艺的部分耗尽SOI MOSFET总剂量辐照效应及可靠性".原子能科学技术 44.10(2010):1257-1261.
Files in This Item:
File Name/Size DocType Version Access License
国产工艺的部分耗尽SOIMOSFET总剂(224KB)期刊论文作者接受稿开放获取CC BY-NC-SAView Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[崔江维]'s Articles
[余学峰]'s Articles
[刘刚]'s Articles
Baidu academic
Similar articles in Baidu academic
[崔江维]'s Articles
[余学峰]'s Articles
[刘刚]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[崔江维]'s Articles
[余学峰]'s Articles
[刘刚]'s Articles
Terms of Use
No data!
Social Bookmark/Share
File name: 国产工艺的部分耗尽SOIMOSFET总剂量辐照效应及可靠性.pdf
Format: Adobe PDF
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.