不同偏置条件的10位CMOS模数转换器的辐射效应
陈睿; 陆妩; 任迪远; 郑玉展; 王义元; 费武雄; 李茂顺; 兰博; 崔江维
2010
Source Publication原子能科学技术
ISSN1000-6931
Volume44Issue:10Pages:1252-1256
Abstract

对10位CMOSADC7910在不同偏置条件下的电离辐射效应及退火特性进行了研究。结果表明:模数混合电路在不同偏置条件下的电离辐照响应有很大的差异。与加电偏置相比,零偏下0.25Gy/s(Si)剂量率辐照时的辐射损伤更严重。并对其损伤机理进行了初步探讨。

Other Abstract

Radiation effects and room-temperature annealing behavior of CMOS analog to digital converters (ADC) irradiated by 60Co γ-rays at various biased conditions were investigated. The results show that the response of the ADC is very different at different bias conditions. The worst irradiation bias condition is zero bias at 0.25 Gy/s(Si) irradiation. Based on the analysis of the mechanism of CMOS ionizing radiation damage, possible sensitive parameters and mechanism for this response were discussed.

Keyword模数转换器 60coγ辐照 室温退火 偏置条件
Indexed ByCSCD
CSCD IDCSCD:4064123
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Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/1745
Collection新疆维吾尔自治区电子信息材料与器件重点实验室
材料物理与化学研究室
Corresponding Author陆妩
Affiliation中国科学院新疆理化技术研究所;新疆电子信息材料与器件重点实验室;中国科学院研究生院
Recommended Citation
GB/T 7714
陈睿,陆妩,任迪远,等. 不同偏置条件的10位CMOS模数转换器的辐射效应[J]. 原子能科学技术,2010,44(10):1252-1256.
APA 陈睿.,陆妩.,任迪远.,郑玉展.,王义元.,...&崔江维.(2010).不同偏置条件的10位CMOS模数转换器的辐射效应.原子能科学技术,44(10),1252-1256.
MLA 陈睿,et al."不同偏置条件的10位CMOS模数转换器的辐射效应".原子能科学技术 44.10(2010):1252-1256.
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