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电荷耦合器件的~(60)Co γ射线辐照损伤退火效应
Alternative Titleannealing effects of charge coupled devices after ~(60)cogammairradiation
李鹏伟; 郭旗; 任迪远; 于跃; 兰博; 李茂顺
Source Publication原子能科学技术
Other AbstractAnnealing experiment of commercial charge coupled devices (CCD) irradiated by gamma rays was carried out at room temperature and 100 °C. Power currents, output signal voltage and optical response sensitivity of CCD were investigated during experiment. The result shows that oxide charges and interface traps result in different behaviors of CCD's parameter during room temperature and 100 °C annealing.
Keyword商用ccd 氧化物电荷 界面态 退火效应
Subject AreaEngineering (Provided By Thomson Reuters)
Indexed ByCSCD
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Document Type期刊论文
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GB/T 7714
李鹏伟,郭旗,任迪远,等. 电荷耦合器件的~(60)Co γ射线辐照损伤退火效应[J]. 原子能科学技术,2010,44(5):603-607.
APA 李鹏伟,郭旗,任迪远,于跃,兰博,&李茂顺.(2010).电荷耦合器件的~(60)Co γ射线辐照损伤退火效应.原子能科学技术,44(5),603-607.
MLA 李鹏伟,et al."电荷耦合器件的~(60)Co γ射线辐照损伤退火效应".原子能科学技术 44.5(2010):603-607.
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