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电荷耦合器件的~(60)Co γ射线辐照损伤退火效应
Alternative Titleannealing effects of charge coupled devices after ~(60)cogammairradiation
李鹏伟; 郭旗; 任迪远; 于跃; 兰博; 李茂顺
2010
Source Publication原子能科学技术
ISSN10006931
Volume44Issue:5Pages:603-607
Abstract基于60Coγ射线辐照后的商用电荷耦合器件(CCD),对室温退火和100℃高温退火实验进行研究。考察了CCD的功耗电流、输出信号电压波形及光响应灵敏度等参数的变化。结果表明,CCD辐照过程中产生的氧化物电荷和界面态导致了CCD参数在室温和高温退火中的不同表现。
Other AbstractAnnealing experiment of commercial charge coupled devices (CCD) irradiated by gamma rays was carried out at room temperature and 100 °C. Power currents, output signal voltage and optical response sensitivity of CCD were investigated during experiment. The result shows that oxide charges and interface traps result in different behaviors of CCD's parameter during room temperature and 100 °C annealing.
Keyword商用ccd 氧化物电荷 界面态 退火效应
Subject AreaEngineering (Provided By Thomson Reuters)
Indexed ByCSCD
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Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/1719
Collection材料物理与化学研究室
Affiliation中国科学院新疆理化技术研究所;中国科学院研究生院
Recommended Citation
GB/T 7714
李鹏伟,郭旗,任迪远,等. 电荷耦合器件的~(60)Co γ射线辐照损伤退火效应[J]. 原子能科学技术,2010,44(5):603-607.
APA 李鹏伟,郭旗,任迪远,于跃,兰博,&李茂顺.(2010).电荷耦合器件的~(60)Co γ射线辐照损伤退火效应.原子能科学技术,44(5),603-607.
MLA 李鹏伟,et al."电荷耦合器件的~(60)Co γ射线辐照损伤退火效应".原子能科学技术 44.5(2010):603-607.
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