不同偏置对NPN双极晶体管的低剂量率电离辐照损伤的影响
Alternative Titlethe low dose rate radiation response of npn bipolar transistors under different bias
费武雄; 陆妩; 任迪远; 郑玉展; 王义元; 陈睿; 王志宽; 杨永晖; 李茂顺; 兰博; 崔江维; 赵云
2010
Source Publication核技术
ISSN0253-3219
Volume33Issue:4Pages:274-277
Abstract

对NPN双极晶体管进行了低剂量率下不同偏置条件的电离辐射实验。结果表明,不同偏置条件下的低剂量率辐射损伤具有明显差异。基-射结反向偏置时,其过剩基极电流最大,电流增益衰减最为显著。而基-射结正向偏置时,过剩基极电流和电流增益衰减都最小。讨论了出现这种结果的内在机制。

KeywordNpn双极晶体管 低剂量率 偏置 60coγ辐照
Indexed ByCSCD
CSCD IDCSCD:3922700
Citation statistics
Cited Times:3[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/1712
Collection新疆维吾尔自治区电子信息材料与器件重点实验室
材料物理与化学研究室
Affiliation中国科学院新疆理化技术研究所;新疆电子信息材料与器件重点实验室;中国科学院研究生院;集成电路国家重点实验室
Recommended Citation
GB/T 7714
费武雄,陆妩,任迪远,等. 不同偏置对NPN双极晶体管的低剂量率电离辐照损伤的影响[J]. 核技术,2010,33(4):274-277.
APA 费武雄.,陆妩.,任迪远.,郑玉展.,王义元.,...&赵云.(2010).不同偏置对NPN双极晶体管的低剂量率电离辐照损伤的影响.核技术,33(4),274-277.
MLA 费武雄,et al."不同偏置对NPN双极晶体管的低剂量率电离辐照损伤的影响".核技术 33.4(2010):274-277.
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