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Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 4, 页码: 702-709
Authors:  Zheng, QW (Zheng, Qiwen)[ 1 ];  Cui, JW (Cui, Jiangwei)[ 1 ];  Xu, LW (Xu, Liewei)[ 2 ];  Ning, BX (Ning, Bingxu)[ 3 ];  Zhao, K (Zhao, Kai)[ 3 ];  Shen, MJ (Shen, Mingjie)[ 3 ];  Yu, XF (Yu, Xuefeng)[ 1 ];  Lu, W (Lu, Wu)[ 1 ];  He, CF (He, Chengfa)[ 1 ];  Ren, DY (Ren, Diyuan)[ 1 ];  Guo, Q (Guo, Qi)
Adobe PDF(1909Kb)  |  Favorite  |  View/Download:35/0  |  Submit date:2019/05/14
Back-gate biasing  forward body bias (FBB)  total ionizing dose (TID)  ultrathin body and buried oxide fully depleted silicon-on-insulator (UTBB FD-SOI)  
Heavy ion-induced single event effects in active pixel sensor array 期刊论文
SOLID-STATE ELECTRONICS, 2019, 卷号: 152, 期号: 2, 页码: 93-99
Authors:  Cai, YL (Cai, Yu-Long)[ 1,2,3 ];  Guo, Q (Guo, Qi)[ 1,2 ];  Li, YD (Li, Yu-Dong)[ 1,2 ];  Wen, L (Wen, Lin)[ 1,2 ];  Zhou, D (Zhou, Dong)[ 1,2 ];  Feng, J (Feng, Jie)[ 1,2 ];  Ma, LD (Ma, Lin-Dong)[ 1,2,3 ];  Zhang, X (Zhang, Xiang)[ 1,2,3 ];  Wang, TH (Wang, Tian-Hui)[ 1,2,3 ]
Adobe PDF(1340Kb)  |  Favorite  |  View/Download:91/1  |  Submit date:2019/01/03
CMOS active pixel sensor (APS)  SEE  Heavy ion  
Spectral and electrical properties of 3 MeV and 10 MeV proton irradiated InGaAsP single junction solar cell 期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2019, 卷号: 58, 期号: 3, 页码: 1-6
Authors:  Xu, Y (Xu, Yan)[ 1,2 ];  Heini, M (Heini, Maliya)[ 2 ];  Shen, XB (Shen, Xiaobao)[ 2,3 ];  Aierken, A (Aierken, Abuduwayiti)[ 2,4 ];  Zhao, XF (Zhao, Xiaofan)[ 2 ];  Sailai, M (Sailai, Momin)[ 2 ];  Lu, W (Lu, Wu)[ 2 ];  Tan, M (Tan, Ming)[ 5 ];  Wu, YY (Wu, Yuanyuan)[ 5 ];  Lu, SL (Lu, Shulong)[ 5 ];  Li, YD (Li, Yudong)[ 2 ];  Guo, Q (Guo, Qi)[ 2 ]
Adobe PDF(740Kb)  |  Favorite  |  View/Download:59/1  |  Submit date:2019/03/19
gamma-Ray Radiation Effects on an HfO2-Based Resistive Memory Device 期刊论文
IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2018, 卷号: 17, 期号: 1, 页码: 61-64
Authors:  Hu, SG (Hu, Shaogang);  Liu, Y (Liu, Yang);  Chen, TP (Chen, Tupei);  Guo, Q (Guo, Qi);  Li, YD (Li, Yu-Dong);  Zhang, XY (Zhang, Xing-Yao);  Deng, LJ (Deng, L. J.);  Yu, Q (Yu, Qi);  Yin, Y (Yin, You);  Hosaka, S (Hosaka, Sumio)
Adobe PDF(1207Kb)  |  Favorite  |  View/Download:59/0  |  Submit date:2018/01/31
Gamma-ray  Hafnium Oxide  Radiation  Resistive Switching  Total Ionizing Dose  
Total ionizing dose and synergistic effects of magnetoresistive random-access memory 期刊论文
NUCLEAR SCIENCE AND TECHNIQUES, 2018, 卷号: 29, 期号: 8, 页码: 1-5
Authors:  Zhang, XY (Zhang, Xing-Yao);  Guo, Q (Guo, Qi);  Li, YD (Li, Yu-Dong);  Wen, L (Wen, Lin);  Zhang, XY
Adobe PDF(522Kb)  |  Favorite  |  View/Download:61/0  |  Submit date:2018/08/07
Magnetoresistive Random-access Memory Total Ionizing Dose  Synergistic Effect  
不同注量率质子辐照对CCD参数退化的影响分析 期刊论文
现代应用物理, 2018, 卷号: 9, 期号: 2, 页码: 67-70
Authors:  李豫东;  文林;  郭旗;  何承发;  周东;  冯婕;  张兴尧;  于新
Adobe PDF(727Kb)  |  Favorite  |  View/Download:42/0  |  Submit date:2018/07/24
质子  电荷耦合器件  辐射效应  注量率  缺陷  
γ射线及质子辐照导致CCD光谱响应退化的机制 期刊论文
发光学报, 2018, 卷号: 39, 期号: 2, 页码: 244-250
Authors:  文林;  李豫东;  郭旗;  汪朝敏
Adobe PDF(1365Kb)  |  Favorite  |  View/Download:66/0  |  Submit date:2018/03/13
电荷耦合器件  电离效应  位移损伤  光谱响应  
Electron-beam-irradiation-induced crystallization of amorphous solid phase change materials 期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 卷号: 57, 期号: 4, 页码: 1-4
Authors:  Zhou, D (Zhou, Dong);  Wu, LC (Wu, Liangcai);  Wen, L (Wen, Lin);  Ma, LY (Ma, Liya);  Zhang, XY (Zhang, Xingyao);  Li, YD (Li, Yudong);  Guo, Q (Guo, Qi);  Song, ZT (Song, Zhitang)
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Investigation of enhanced low dose rate sensitivity in SiGe HBTs by Co-60 gamma irradiation under different biases 期刊论文
MICROELECTRONICS RELIABILITY, 2018, 卷号: 84, 期号: 5, 页码: 105-111
Authors:  Zhang, JX (Zhang, Jin-xin);  Guo, Q (Guo, Qi);  Guo, HX (Guo, Hong-xia);  Lu, W (Lu, Wu);  He, CH (He, Chao-hui);  Wang, X (Wang, Xin);  Li, P (Li, Pei);  Wen, L (Wen, Lin)
Adobe PDF(1371Kb)  |  Favorite  |  View/Download:60/0  |  Submit date:2018/06/20
Eldrs  Sige Hbt  Gamma Irradiation  Bias Conditions  
Estimation of enhanced low dose rate sensitivity mechanisms using temperature switching irradiation on gate-controlled lateral PNP transistor 期刊论文
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 3, 页码: 1-9
Authors:  Li, XL (Li, Xiao-Long);  Lu, W (Lu, Wu);  Wang, X (Wang, Xin);  Yu, X (Yu, Xin);  Guo, Q (Guo, Qi);  Sun, J (Sun, Jing);  Liu, MH (Liu, Mo-Han);  Yao, S (Yao, Shuai);  Wei, XY (Wei, Xin-Yu);  He, CF (He, Cheng-Fa)
Adobe PDF(950Kb)  |  Favorite  |  View/Download:35/0  |  Submit date:2018/05/14
Ionizing Radiation Damage  Enhanced Low Dose Rate Sensitivity (Eldrs)  Switched Temperature Irradiation  Gate-controlled Lateral Pnp Transistor (glPnp)