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Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 4, 页码: 702-709
Authors:  Zheng, QW (Zheng, Qiwen)[ 1 ];  Cui, JW (Cui, Jiangwei)[ 1 ];  Xu, LW (Xu, Liewei)[ 2 ];  Ning, BX (Ning, Bingxu)[ 3 ];  Zhao, K (Zhao, Kai)[ 3 ];  Shen, MJ (Shen, Mingjie)[ 3 ];  Yu, XF (Yu, Xuefeng)[ 1 ];  Lu, W (Lu, Wu)[ 1 ];  He, CF (He, Chengfa)[ 1 ];  Ren, DY (Ren, Diyuan)[ 1 ];  Guo, Q (Guo, Qi)
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Back-gate biasing  forward body bias (FBB)  total ionizing dose (TID)  ultrathin body and buried oxide fully depleted silicon-on-insulator (UTBB FD-SOI)  
Spectral and electrical properties of 3 MeV and 10 MeV proton irradiated InGaAsP single junction solar cell 期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2019, 卷号: 58, 期号: 3, 页码: 1-6
Authors:  Xu, Y (Xu, Yan)[ 1,2 ];  Heini, M (Heini, Maliya)[ 2 ];  Shen, XB (Shen, Xiaobao)[ 2,3 ];  Aierken, A (Aierken, Abuduwayiti)[ 2,4 ];  Zhao, XF (Zhao, Xiaofan)[ 2 ];  Sailai, M (Sailai, Momin)[ 2 ];  Lu, W (Lu, Wu)[ 2 ];  Tan, M (Tan, Ming)[ 5 ];  Wu, YY (Wu, Yuanyuan)[ 5 ];  Lu, SL (Lu, Shulong)[ 5 ];  Li, YD (Li, Yudong)[ 2 ];  Guo, Q (Guo, Qi)[ 2 ]
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基于钴源辐照的光释光测年方法研究 期刊论文
科技视界, 2018, 期号: 11, 页码: 91-93
Authors:  邹德洋;  何承发;  陆妩;  张峰;  葛本伟
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钴源  光释光测年  石英  能量沉积  
Investigation of enhanced low dose rate sensitivity in SiGe HBTs by Co-60 gamma irradiation under different biases 期刊论文
MICROELECTRONICS RELIABILITY, 2018, 卷号: 84, 期号: 5, 页码: 105-111
Authors:  Zhang, JX (Zhang, Jin-xin);  Guo, Q (Guo, Qi);  Guo, HX (Guo, Hong-xia);  Lu, W (Lu, Wu);  He, CH (He, Chao-hui);  Wang, X (Wang, Xin);  Li, P (Li, Pei);  Wen, L (Wen, Lin)
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Eldrs  Sige Hbt  Gamma Irradiation  Bias Conditions  
Estimation of enhanced low dose rate sensitivity mechanisms using temperature switching irradiation on gate-controlled lateral PNP transistor 期刊论文
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 3, 页码: 1-9
Authors:  Li, XL (Li, Xiao-Long);  Lu, W (Lu, Wu);  Wang, X (Wang, Xin);  Yu, X (Yu, Xin);  Guo, Q (Guo, Qi);  Sun, J (Sun, Jing);  Liu, MH (Liu, Mo-Han);  Yao, S (Yao, Shuai);  Wei, XY (Wei, Xin-Yu);  He, CF (He, Cheng-Fa)
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Ionizing Radiation Damage  Enhanced Low Dose Rate Sensitivity (Eldrs)  Switched Temperature Irradiation  Gate-controlled Lateral Pnp Transistor (glPnp)  
国产pnp双极晶体管在宽总剂量范围辐照下的ELDRS 期刊论文
半导体技术, 2018, 卷号: 43, 期号: 5, 页码: 369-374
Authors:  魏昕宇;  陆妩;  李小龙;  王信;  孙静;  于新;  姚帅;  刘默寒;  郭旗
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国产pnp型双极晶体管  宽总剂量范围  低剂量率损伤增强效应(Eldrs)  辐射损伤  剂量率  
Using temperature-switching approach to evaluate the ELDRS of bipolar devices 期刊论文
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2018, 卷号: 172, 期号: 11-12, 页码: 824-834
Authors:  Li, XL (Li, Xiaolong);  Lu, W (Lu, Wu);  Wang, X (Wang, Xin);  Guo, Q (Guo, Qi);  Yu, X (Yu, Xin);  He, CF (He, Chengfa);  Sun, J (Sun, Jing);  Liu, MH (Liu, Mohan);  Yao, S (Yao, Shuai);  Wei, XY (Wei, Xinyu)查看 ResearcherID 和 ORCID
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Bipolar Technology  Co-60 Gamma Irradiation  Enhanced Low-dose Rate Sensitivity (Eldrs)  Temperature-switching Approach (Tsa)  
双多晶自对准NPN管的总剂量辐射效应研究 期刊论文
微电子学, 2018, 卷号: 48, 期号: 1, 页码: 120-125
Authors:  贾金成;  陆妩;  吴雪;  张培健;  孙静;  王信;  李小龙;  刘默寒;  郭旗;  刘元
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双多晶自动准  Npn管  60co-γ辐射  辐射损伤  
Estimation of low-dose-rate degradation on bipolar linear circuits using different accelerated evaluation methods 期刊论文
ACTA PHYSICA SINICA, 2018, 卷号: 67, 期号: 9, 页码: 202-209
Authors:  Li, XL (Li Xiao-Long)[ 1,2,3 ];  Lu, W (Lu Wu)[ 1,2 ];  Wang, X (Wang Xin)[ 1,2,3 ];  Guo, Q (Guo Qi)[ 1,2 ];  He, CF (He Cheng-Fa)[ 1,2 ];  Sun, J (Sun Jing)[ 1,2 ];  Yu, X (Yu Xin)[ 1,2 ];  Liu, MH (Liu Mo-Han)[ 1,2,3 ];  Jia, JC (Jia Jin-Cheng)[ 1,2,3 ];  Yao, S (Yao Shuai)[ 1,2,3 ];  Wei, XY (Wei Xin-Yu)[ 1,2,3 ]
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Bipolar Circuit  Enhanced Low-dose-rate Sensitivity  Accelerated Evaluation Method  
典型模拟电路低剂量率辐照损伤增强效应的研究与评估 期刊论文
物理学报, 2018, 卷号: 67, 期号: 9, 页码: 202-209
Authors:  李小龙;  陆妩;  王信;  郭旗;  何承发;  孙静;  于新;  刘默寒;  贾金成;  姚帅;  魏昕宇
Adobe PDF(618Kb)  |  Favorite  |  View/Download:63/1  |  Submit date:2018/09/12
双极模拟电路  低剂量率辐照损伤增强效应  加速评估方法