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Exploration of the deep-ultraviolet nonlinear optical materials in the derivatives of KBe2BO3F2 期刊论文
ACTA PHYSICA SINICA, 2019, 卷号: 68, 期号: 2, 页码: 7-22
Authors:  Gai, MQ (Gai Min-Qiang)[ 1,2 ];  Wang, Y (Wang Ying)[ 1 ];  Pan, SL (Pan Shi-Lie)[ 1 ]
Adobe PDF(1666Kb)  |  Favorite  |  View/Download:58/3  |  Submit date:2019/03/05
deep-ultraviolet  nonlinear optical crystals  KBe2BO3F2  second harmonic generation  
Estimation of low-dose-rate degradation on bipolar linear circuits using different accelerated evaluation methods 期刊论文
ACTA PHYSICA SINICA, 2018, 卷号: 67, 期号: 9, 页码: 202-209
Authors:  Li, XL (Li Xiao-Long)[ 1,2,3 ];  Lu, W (Lu Wu)[ 1,2 ];  Wang, X (Wang Xin)[ 1,2,3 ];  Guo, Q (Guo Qi)[ 1,2 ];  He, CF (He Cheng-Fa)[ 1,2 ];  Sun, J (Sun Jing)[ 1,2 ];  Yu, X (Yu Xin)[ 1,2 ];  Liu, MH (Liu Mo-Han)[ 1,2,3 ];  Jia, JC (Jia Jin-Cheng)[ 1,2,3 ];  Yao, S (Yao Shuai)[ 1,2,3 ];  Wei, XY (Wei Xin-Yu)[ 1,2,3 ]
Adobe PDF(531Kb)  |  Favorite  |  View/Download:78/0  |  Submit date:2018/09/27
Bipolar Circuit  Enhanced Low-dose-rate Sensitivity  Accelerated Evaluation Method  
Total ionizing dose radiation effects in foue-transistor complementary metal oxide semiconductor image sensors 期刊论文
ACTA PHYSICA SINICA, 2016, 卷号: 65, 期号: 2, 页码: 180-185
Authors:  Wang, F (Wang Fan);  Li, YD (Li Yu-Dong);  Guo, Q (Guo Qi);  Wang, B (Wang Bo);  Zhang, XY (Zhang Xing-Yao);  Wen, L (Wen Lin);  He, CF (He Cheng-Fa)
Adobe PDF(455Kb)  |  Favorite  |  View/Download:85/0  |  Submit date:2016/12/13
Complementary Metal Oxide Semiconductor Image Sensor  Total Ionizing Dose Radiation Effect  Pinned Photodiode  Full Well Chargecapacity  
Enhanced channel hot carrier effect of 0.13 mu m silicon-on-insulator N metal-oxide-semiconductor field-effect transistor induced by total ionizing dose effect 期刊论文
ACTA PHYSICA SINICA, 2016, 卷号: 65, 期号: 9
Authors:  Zhou, H (Zhou Hang);  Zheng, QW (Zheng Qi-Wen);  Cui, JW (Cui Jiang-Wei);  Yu, XF (Yu Xue-Feng);  Guo, Q (Guo Qi);  Ren, DY (Ren Di-Yuan);  Yu, DZ (Yu De-Zhao);  Su, DD (Su Dan-Dan);  Yu, XF
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Silicon-on-insulator  Ionizing Radiation  Hot Carriers  
Photoluminescence spectra of 1 MeV electron beam irradiated In0.53Ga0.47As/InP quantum well and bulk materials 期刊论文
ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 15, 页码: 252-258
Authors:  Ma, LY (Ma Li-Ya);  Li, YD (Li Yu-Dong);  Guo, Q (Guo Qi);  Ai, EK (Ai Er-Ken);  Wang, HJ (Wang Hai-Jiao);  Wang, B (Wang Bo);  Zeng, JZ (Zeng Jun-Zhe)
Adobe PDF(726Kb)  |  Favorite  |  View/Download:35/0  |  Submit date:2018/01/25
In0.53ga0.47as/inp  Quantum Well  Electron Beam Irradiation  Photoluminescence  
Dark signal degradation in proton-irradiated complementary metal oxide semiconductor active pixel sensor 期刊论文
ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 8, 页码: 193-199
Authors:  Wang, B (Wang Bo);  Li, YD (Li Yu-Dong);  Guo, Q (Guo Qi);  Liu, CJ (Liu Chang-Ju);  Wen, L (Wen Lin);  Ren, DY (Ren Di-Yuan);  Zeng, JZ (Zeng Jun-Zhe);  Ma, LY (Ma Li-Ya)
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Complementary Metal Oxide Semiconductor Active Pixel Sensor  Dark Signal  Proton Radiation  Displacement Effect  
Radiation damage effect and post-annealing treatments of NPN-input bipolar operational amplifier in electron radiation environment 期刊论文
ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 13, 页码: 302-308
Authors:  Jiang, K (Jiang Ke);  Lu, W (Lu Wu);  Hu, TL (Hu Tian-Le);  Wang, X (Wang Xin);  Guo, Q (Guo Qi);  He, CF (He Cheng-Fa);  Liu, MH (Liu Mo-Han);  Li, XL (Li Xiao-Long)
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Npn-input Bipolar Operational Amplifier  Electron Radiation  Radiation Effect  Annealing  
Reliability of partially-depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistor under the ionizing radiation environment 期刊论文
ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 8
Authors:  Zhou, H (Zhou Hang);  Cui, JW (Cui Jiang-Wei);  Zheng, QW (Zheng Qi-Wen);  Guo, Q (Guo Qi);  Ren, DY (Ren Di-Yuan);  Yu, XF (Yu Xue-Feng);  Yu, XF
Adobe PDF(465Kb)  |  Favorite  |  View/Download:36/0  |  Submit date:2018/01/26
Reliability  Silicon-on-insulator N-channel Metal-oxide-semiconductor Field-effect Transistor  Total Ionizing Dose Effect  Electrical Stress  
Radiation effects on the low frequency noise in partially depleted silicon on insulator transistors 期刊论文
ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 7
Authors:  Liu, Y (Liu Yuan);  Chen, HB (Chen Hai-Bo);  He, YJ (He Yu-Juan);  Wang, X (Wang Xin);  Yue, L (Yue Long);  En, YF (En Yun-Fei);  Liu, MH (Liu Mo-Han)
Adobe PDF(507Kb)  |  Favorite  |  View/Download:30/0  |  Submit date:2018/01/26
SilicOn On Insulator  Partially Depleted  Ionizing Radiation  Low Frequency Noise  
Simulation and sesign of single event effect radiation hardening for SiGe heterojunction bipolar transistor 期刊论文
ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 11
Authors:  Li, P (Li Pei);  Guo, HX (Guo Hong-Xia);  Guo, Q (Guo Qi);  Wen, L (Wen Lin);  Cui, JW (Cui Jiang-Wei);  Wang, X (Wang Xin);  Zhang, JX (Zhang Jin-Xin)
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Sige Heterojunction Bipolar Transistor  Single Event Effect  Hardening Design  Dummy Collector