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学科主题: Physics
题名: Landau level states on a topological insulator thin film
作者: Yang Zhihua; Han Jung Hoon
通讯作者: Yang, ZH
刊名: PHYSICAL REVIEW B
发表日期: 2011
DOI: 10.1103/PhysRevB.83.045415
卷: 83, 期:4, 页:-
收录类别: SCI
资助者: MEST
摘要: We analyze the four-dimensional Hamiltonian proposed to describe the band structure of the single-Dirac-cone family of topological insulators in the presence of a uniform perpendicular magnetic field. Surface Landau level (LL) states appear, decoupled from the bulk levels and following the quantized energy dispersion of a purely two-dimensional surface Dirac Hamiltonian. A small hybridization gap splits the degeneracy of the central n = 0 LL, with dependence on the film thickness and the field strength that can be obtained analytically. Explicit calculations of the spin and charge densities show that surface LL states are localized within approximately one quintuple layer from the surface termination. Some new surface-bound LLs are shown to exist at a higher Landau level index.
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内容类型: 期刊论文
URI标识: http://ir.xjipc.cas.cn/handle/365002/1674
Appears in Collections:材料物理与化学研究室_期刊论文

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作者单位: Sungkyunkwan Univ, Dept Phys, Suwon 440746, South Korea;Sungkyunkwan Univ, Phys Res Div BK21, Suwon 440746, South Korea;Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China

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Yang Zhihua,Han Jung Hoon. Landau level states on a topological insulator thin film[J]. PHYSICAL REVIEW B,2011,83(4):-.
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