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Landau level states on a topological insulator thin film
Yang Zhihua; Han Jung Hoon; Yang, ZH
2011
发表期刊PHYSICAL REVIEW B
ISSN1098-0121
卷号83期号:4
摘要We analyze the four-dimensional Hamiltonian proposed to describe the band structure of the single-Dirac-cone family of topological insulators in the presence of a uniform perpendicular magnetic field. Surface Landau level (LL) states appear, decoupled from the bulk levels and following the quantized energy dispersion of a purely two-dimensional surface Dirac Hamiltonian. A small hybridization gap splits the degeneracy of the central n = 0 LL, with dependence on the film thickness and the field strength that can be obtained analytically. Explicit calculations of the spin and charge densities show that surface LL states are localized within approximately one quintuple layer from the surface termination. Some new surface-bound LLs are shown to exist at a higher Landau level index.
学科领域Physics
DOI10.1103/PhysRevB.83.045415
收录类别SCI
WOS记录号WOS:000286772900004
引用统计
被引频次:18[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.xjipc.cas.cn/handle/365002/1674
专题材料物理与化学研究室
通讯作者Yang, ZH
作者单位Sungkyunkwan Univ, Dept Phys, Suwon 440746, South Korea;Sungkyunkwan Univ, Phys Res Div BK21, Suwon 440746, South Korea;Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China
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Yang Zhihua,Han Jung Hoon,Yang, ZH. Landau level states on a topological insulator thin film[J]. PHYSICAL REVIEW B,2011,83(4).
APA Yang Zhihua,Han Jung Hoon,&Yang, ZH.(2011).Landau level states on a topological insulator thin film.PHYSICAL REVIEW B,83(4).
MLA Yang Zhihua,et al."Landau level states on a topological insulator thin film".PHYSICAL REVIEW B 83.4(2011).
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