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Landau level states on a topological insulator thin film
Yang Zhihua; Han Jung Hoon
Source PublicationPHYSICAL REVIEW B

We analyze the four-dimensional Hamiltonian proposed to describe the band structure of the single-Dirac-cone family of topological insulators in the presence of a uniform perpendicular magnetic field. Surface Landau level (LL) states appear, decoupled from the bulk levels and following the quantized energy dispersion of a purely two-dimensional surface Dirac Hamiltonian. A small hybridization gap splits the degeneracy of the central n = 0 LL, with dependence on the film thickness and the field strength that can be obtained analytically. Explicit calculations of the spin and charge densities show that surface LL states are localized within approximately one quintuple layer from the surface termination. Some new surface-bound LLs are shown to exist at a higher Landau level index.

Subject AreaPhysics
Indexed BySCI
WOS IDWOS:000286772900004
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Cited Times:18[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Corresponding AuthorYang Zhihua
AffiliationSungkyunkwan Univ, Dept Phys, Suwon 440746, South Korea;Sungkyunkwan Univ, Phys Res Div BK21, Suwon 440746, South Korea;Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China
Recommended Citation
GB/T 7714
Yang Zhihua,Han Jung Hoon. Landau level states on a topological insulator thin film[J]. PHYSICAL REVIEW B,2011,83(4):1-7.
APA Yang Zhihua,&Han Jung Hoon.(2011).Landau level states on a topological insulator thin film.PHYSICAL REVIEW B,83(4),1-7.
MLA Yang Zhihua,et al."Landau level states on a topological insulator thin film".PHYSICAL REVIEW B 83.4(2011):1-7.
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