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Effects of orientation of substrate on the enhanced low-dose-rate sensitivity (ELDRS) in NPN transistors
Lu Wu; Zheng Yu-Zhan; Wang Yi-Yuan; Ren Di-Yuan; Guo Qi; Wang Zhi-Kuan; Wang Jian-An
2011
Source PublicationCHINESE PHYSICS C
ISSN1674-1137
Volume35Issue:2Pages:169-173
Abstract

The radiation effects and annealing characteristics of two types of domestic NPN bipolar junction transistors, fabricated with different orientations, were investigated under different dose-rate irradiation. The experimental results show that both types of the NPN transistors exhibit remarkable Enhanced Low-Dose-Rate Sensitivity (ELDRS). After irradiation at high or low dose rate, the excess base current of NPN transistors obviously increased, and the current gain would degrade rapidly. Moreover, the decrease of collector current was also observed. The NPN transistor with < 111 > orientation was more sensitive to ionizing radiation than that with < 100 > orientation. The underlying mechanisms of various experimental phenomena are discussed in detail in this paper.

KeywordNpn Bipolar Junction Transistors (60)Co-gamma Irradiation Eldrs Orientation Of Substrate
Subject AreaPhysics
DOI10.1088/1674-1137/35/2/012
Indexed BySCI
WOS IDWOS:000287274800012
Citation statistics
Cited Times:1[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/1671
Collection材料物理与化学研究室
Corresponding AuthorLu Wu
Affiliation1.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China
2.Xinjiang Key Lab Informat Mat & Devices, Urumqi 830011, Peoples R China
3.Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China
4.State Key Lab Analog Integrated Circuits, Chongqing 400060, Peoples R China
Recommended Citation
GB/T 7714
Lu Wu,Zheng Yu-Zhan,Wang Yi-Yuan,et al. Effects of orientation of substrate on the enhanced low-dose-rate sensitivity (ELDRS) in NPN transistors[J]. CHINESE PHYSICS C,2011,35(2):169-173.
APA Lu Wu.,Zheng Yu-Zhan.,Wang Yi-Yuan.,Ren Di-Yuan.,Guo Qi.,...&Wang Jian-An.(2011).Effects of orientation of substrate on the enhanced low-dose-rate sensitivity (ELDRS) in NPN transistors.CHINESE PHYSICS C,35(2),169-173.
MLA Lu Wu,et al."Effects of orientation of substrate on the enhanced low-dose-rate sensitivity (ELDRS) in NPN transistors".CHINESE PHYSICS C 35.2(2011):169-173.
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