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学科主题: Physics
题名: Effects of orientation of substrate on the enhanced low-dose-rate sensitivity (ELDRS) in NPN transistors
作者: Lu Wu; Zheng Yu-Zhan; Wang Yi-Yuan; Ren Di-Yuan; Guo Qi; Wang Zhi-Kuan; Wang Jian-An
通讯作者: Lu, W
关键词: NPN bipolar junction transistors ; (60)Co-gamma irradiation ; ELDRS ; orientation of substrate
刊名: CHINESE PHYSICS C
发表日期: 2011
DOI: 10.1088/1674-1137/35/2/012
卷: 35, 期:2, 页:169-173
收录类别: SCI
摘要: The radiation effects and annealing characteristics of two types of domestic NPN bipolar junction transistors, fabricated with different orientations, were investigated under different dose-rate irradiation. The experimental results show that both types of the NPN transistors exhibit remarkable Enhanced Low-Dose-Rate Sensitivity (ELDRS). After irradiation at high or low dose rate, the excess base current of NPN transistors obviously increased, and the current gain would degrade rapidly. Moreover, the decrease of collector current was also observed. The NPN transistor with < 111 > orientation was more sensitive to ionizing radiation than that with < 100 > orientation. The underlying mechanisms of various experimental phenomena are discussed in detail in this paper.
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内容类型: 期刊论文
URI标识: http://ir.xjipc.cas.cn/handle/365002/1671
Appears in Collections:材料物理与化学研究室_期刊论文

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作者单位: Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China;Xinjiang Key Lab Informat Mat & Devices, Urumqi 830011, Peoples R China;Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China;State Key Lab Analog Integrated Circuits, Chongqing 400060, Peoples R China

Recommended Citation:
Lu Wu,Zheng Yu-Zhan,Wang Yi-Yuan,et al. Effects of orientation of substrate on the enhanced low-dose-rate sensitivity (ELDRS) in NPN transistors[J]. CHINESE PHYSICS C,2011,35(2):169-173.
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文件名: Effects of orientation of substrate on the enhanced low-dose-rate sensitivity (ELDRS) in NPN transistors.pdf
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