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Research on the total-dose irradiation damage effect for static random access memory-based field programmable gate array
Gao Bo; Yu Xue-Feng; Ren Di-Yuan; Li Yu-Dong; Cui Jiang-Wei; Li Mao-Shun; Li Ming; Wang Yi-Yuan; Yu, XF
2011
发表期刊ACTA PHYSICA SINICA
ISSN1000-3290
卷号60期号:3
摘要In order to investigate the total-dose irradiation effects of Altera static random access memory (SRAM) -based FPGA (field programmable gate array), the irradiation response of basic cell of FPGA, i. e. the CMOS, is studied, and the relationship of the output waveform as a function of total dose has been obtained. It indicates that the output waveforms become aberrated and the peak-peak value turns to about 1/10 of the initial value as the total dose increased, resulting from the degradation of leakage current both from field oxygen and the structure; but there are relatively high and low levels left in the output waveforms. Meanwhile, the high level can't keep the already existing state and changes to the low level, and the conversion speed it; accelerated with the increase of the total dose. The low level becomes larger than the initial value. As the gate-oxygen is quite thin, the rise time, fall time, and delay of the output waveforms change little with the total dose.
关键词(60)Co Gamma Total-dose Irradiation Damage Effects Sram-based Fpga Cmos Cell
学科领域Physics
收录类别SCI
WOS记录号WOS:000288925700068
引用统计
被引频次:6[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.xjipc.cas.cn/handle/365002/1670
专题材料物理与化学研究室
通讯作者Yu, XF
作者单位Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China;Xinjiang Prov Key Lab Elect Informat Mat & Device, Urumqi 830011, Peoples R China;Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China
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Gao Bo,Yu Xue-Feng,Ren Di-Yuan,et al. Research on the total-dose irradiation damage effect for static random access memory-based field programmable gate array[J]. ACTA PHYSICA SINICA,2011,60(3).
APA Gao Bo.,Yu Xue-Feng.,Ren Di-Yuan.,Li Yu-Dong.,Cui Jiang-Wei.,...&Yu, XF.(2011).Research on the total-dose irradiation damage effect for static random access memory-based field programmable gate array.ACTA PHYSICA SINICA,60(3).
MLA Gao Bo,et al."Research on the total-dose irradiation damage effect for static random access memory-based field programmable gate array".ACTA PHYSICA SINICA 60.3(2011).
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