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Theorical model of enhanced low dose rate sensitivity observed in p-type metal-oxide-semiconductor field-effect transistor
Gao Bo; Yu Xue-Feng; Ren Di-Yuan; Cui Jiang-Wei; Lan Bo; Li Ming; Wang Yi-Yuan; Yu, XF
2011
发表期刊ACTA PHYSICA SINICA
ISSN1000-3290
卷号60期号:6
摘要In this paper, the ionizing damage effects and the annealing behaviors of an import producti, p-type metal-oxide-semiconductor field-effect transistor (PMOSFET), an unhardened 4007 circuit under different doses are investigated. We measure the sub-threshold I-V characteristic curves of PMOSFET under different bias doses. The dependence of the drift of threshold voltage on total dose is discussed. We also observe the relationship between the parameter and the annealing time. The experiment results show that the PMOSFET of this kind can enhance low dose rate sensitivity (ELDRS) effect. The interface-trap formation by H(+) transmission in the SiO(2) is explained. We believe that the interface trap is a primary reason to induce ELDRS effect of PMOSFET. We also discuss the physical model of enhancing low dose rate sensitivity effect of PMOSFET.
关键词P-type Metal-oxide-semiconductor Field-effect Transistor Co-60 Gamma-ray Total-dose Irradiation Damage Effects Enhanced Low Dose Rate Sensitivity
学科领域Physics
收录类别SCI
WOS记录号WOS:000292017800122
引用统计
被引频次:3[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.xjipc.cas.cn/handle/365002/1659
专题材料物理与化学研究室
通讯作者Yu, XF
作者单位Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China;Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China; Xinjiang Autonomous Reg Key Lab Elect Informat Ma, Urumqi 830011, Peoples R China
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Gao Bo,Yu Xue-Feng,Ren Di-Yuan,et al. Theorical model of enhanced low dose rate sensitivity observed in p-type metal-oxide-semiconductor field-effect transistor[J]. ACTA PHYSICA SINICA,2011,60(6).
APA Gao Bo.,Yu Xue-Feng.,Ren Di-Yuan.,Cui Jiang-Wei.,Lan Bo.,...&Yu, XF.(2011).Theorical model of enhanced low dose rate sensitivity observed in p-type metal-oxide-semiconductor field-effect transistor.ACTA PHYSICA SINICA,60(6).
MLA Gao Bo,et al."Theorical model of enhanced low dose rate sensitivity observed in p-type metal-oxide-semiconductor field-effect transistor".ACTA PHYSICA SINICA 60.6(2011).
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