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学科主题: Physics
题名: Theorical model of enhanced low dose rate sensitivity observed in p-type metal-oxide-semiconductor field-effect transistor
作者: Gao Bo; Yu Xue-Feng; Ren Di-Yuan; Cui Jiang-Wei; Lan Bo; Li Ming; Wang Yi-Yuan
通讯作者: Yu, XF
关键词: p-type metal-oxide-semiconductor field-effect transistor ; Co-60 gamma-ray ; total-dose irradiation damage effects ; enhanced low dose rate sensitivity
刊名: ACTA PHYSICA SINICA
发表日期: 2011
卷: 60, 期:6, 页:-
收录类别: SCI
摘要: In this paper, the ionizing damage effects and the annealing behaviors of an import producti, p-type metal-oxide-semiconductor field-effect transistor (PMOSFET), an unhardened 4007 circuit under different doses are investigated. We measure the sub-threshold I-V characteristic curves of PMOSFET under different bias doses. The dependence of the drift of threshold voltage on total dose is discussed. We also observe the relationship between the parameter and the annealing time. The experiment results show that the PMOSFET of this kind can enhance low dose rate sensitivity (ELDRS) effect. The interface-trap formation by H(+) transmission in the SiO(2) is explained. We believe that the interface trap is a primary reason to induce ELDRS effect of PMOSFET. We also discuss the physical model of enhancing low dose rate sensitivity effect of PMOSFET.
内容类型: 期刊论文
URI标识: http://ir.xjipc.cas.cn/handle/365002/1659
Appears in Collections:材料物理与化学研究室_期刊论文

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作者单位: Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China;Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China; Xinjiang Autonomous Reg Key Lab Elect Informat Ma, Urumqi 830011, Peoples R China

Recommended Citation:
Gao Bo,Yu Xue-Feng,Ren Di-Yuan,et al. Theorical model of enhanced low dose rate sensitivity observed in p-type metal-oxide-semiconductor field-effect transistor[J]. ACTA PHYSICA SINICA,2011,60(6):-.
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文件名: theorical model of enhanced low dose rate sensitivity observed in p-type metal-oxide-semiconductor field-effect transistor.pdf
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