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RELATIONSHIP BETWEEN SILICON-ON-INSULATOR KINK AND RADIATION EFFECTS
Cui Jiangwei; Yu Xuefeng; Ren Diyuan; Cui, JW
2011
Source PublicationINTERNATIONAL JOURNAL OF MODERN PHYSICS E-NUCLEAR PHYSICS
ISSN0218-3013
Volume20Issue:6Pages:1409-1417
AbstractRelationship between the kink and radiation effects of SOI MOSFET is investigated. The experiment results show that radiation exposure can play an important role on the behavior of the kink. The mechanisms of both the kink and radiation effects are clearly illustrated and the way the radiation affects the behavior of the kink are described in detail
KeywordSoi Kink Radiation
Subject AreaPhysics
DOI10.1142/S0218301311018435
Indexed BySCI
WOS IDWOS:000292644900004
Citation statistics
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/1658
Collection材料物理与化学研究室
Corresponding AuthorCui, JW
AffiliationChinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Xinjiang 830011, Peoples R China;Chinese Acad Sci, Grad Sch, Xinjiang Key Lab Elect Informat Mat & Devices, Xinjiang 830011, Peoples R China
Recommended Citation
GB/T 7714
Cui Jiangwei,Yu Xuefeng,Ren Diyuan,et al. RELATIONSHIP BETWEEN SILICON-ON-INSULATOR KINK AND RADIATION EFFECTS[J]. INTERNATIONAL JOURNAL OF MODERN PHYSICS E-NUCLEAR PHYSICS,2011,20(6):1409-1417.
APA Cui Jiangwei,Yu Xuefeng,Ren Diyuan,&Cui, JW.(2011).RELATIONSHIP BETWEEN SILICON-ON-INSULATOR KINK AND RADIATION EFFECTS.INTERNATIONAL JOURNAL OF MODERN PHYSICS E-NUCLEAR PHYSICS,20(6),1409-1417.
MLA Cui Jiangwei,et al."RELATIONSHIP BETWEEN SILICON-ON-INSULATOR KINK AND RADIATION EFFECTS".INTERNATIONAL JOURNAL OF MODERN PHYSICS E-NUCLEAR PHYSICS 20.6(2011):1409-1417.
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