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RELATIONSHIP BETWEEN SILICON-ON-INSULATOR KINK AND RADIATION EFFECTS
Cui Jiangwei; Yu Xuefeng; Ren Diyuan; Cui, JW
2011
发表期刊INTERNATIONAL JOURNAL OF MODERN PHYSICS E-NUCLEAR PHYSICS
ISSN0218-3013
卷号20期号:6页码:1409-1417
摘要Relationship between the kink and radiation effects of SOI MOSFET is investigated. The experiment results show that radiation exposure can play an important role on the behavior of the kink. The mechanisms of both the kink and radiation effects are clearly illustrated and the way the radiation affects the behavior of the kink are described in detail
关键词Soi Kink Radiation
学科领域Physics
DOI10.1142/S0218301311018435
收录类别SCI
WOS记录号WOS:000292644900004
引用统计
文献类型期刊论文
条目标识符http://ir.xjipc.cas.cn/handle/365002/1658
专题材料物理与化学研究室
通讯作者Cui, JW
作者单位Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Xinjiang 830011, Peoples R China;Chinese Acad Sci, Grad Sch, Xinjiang Key Lab Elect Informat Mat & Devices, Xinjiang 830011, Peoples R China
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GB/T 7714
Cui Jiangwei,Yu Xuefeng,Ren Diyuan,et al. RELATIONSHIP BETWEEN SILICON-ON-INSULATOR KINK AND RADIATION EFFECTS[J]. INTERNATIONAL JOURNAL OF MODERN PHYSICS E-NUCLEAR PHYSICS,2011,20(6):1409-1417.
APA Cui Jiangwei,Yu Xuefeng,Ren Diyuan,&Cui, JW.(2011).RELATIONSHIP BETWEEN SILICON-ON-INSULATOR KINK AND RADIATION EFFECTS.INTERNATIONAL JOURNAL OF MODERN PHYSICS E-NUCLEAR PHYSICS,20(6),1409-1417.
MLA Cui Jiangwei,et al."RELATIONSHIP BETWEEN SILICON-ON-INSULATOR KINK AND RADIATION EFFECTS".INTERNATIONAL JOURNAL OF MODERN PHYSICS E-NUCLEAR PHYSICS 20.6(2011):1409-1417.
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