The influence of channel size on total dose irradiation and hot-carrier effects of sub-micro NMOSFET
Cui Jiang-Wei; Yu Xue-Feng; Ren Di-Yuan; Lu Jian; Cui, JW
2012
发表期刊ACTA PHYSICA SINICA
ISSN1000-3290
卷号61期号:2页码:-
摘要

otal dose irradiation and the hot-carrier damages are two of the important factors for the application of sub-micro and even smaller MOS devices. Therefore, how to prevent the device from being damaged attracts much attention. Total dose irradiation and hot-carrier effects of sub-micro NMOSFET with various channel sizes are studied. Electronic parameters are measured and the results show that though the principles of damages are somewhat similar, the total dose irradiation and the damage behavior and their dependences on the width-to-length(W/L) ratio of channel size for these two effects are different. The most notable damage of radiation lies in the great increase of the off-state leakage current, and the damage increases with W/L reducing. While for hot-carrier effect, several parameters such as trans-conductance change a lot, except for the off-state leakage current. And the damage increases as channel length and channel width decrease. The different damage behaviors and different relations to channel size are attributed to the different location of charges induced. Therefore, different aspects should be considered when the device is hardened against these two effects.

关键词Sub-micro Total Dose Irradiation Hot-carrier Effect
学科领域Physics
收录类别SCI
WOS记录号WOS:000302129500050
引用统计
被引频次:9[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.xjipc.cas.cn/handle/365002/1649
专题新疆维吾尔自治区电子信息材料与器件重点实验室
通讯作者Cui, JW
作者单位Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China;Xinjiang Key Lab Elect Informat Mat & Devices, Urumqi 830011, Peoples R China;Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China
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Cui Jiang-Wei,Yu Xue-Feng,Ren Di-Yuan,et al. The influence of channel size on total dose irradiation and hot-carrier effects of sub-micro NMOSFET[J]. ACTA PHYSICA SINICA,2012,61(2):-.
APA Cui Jiang-Wei,Yu Xue-Feng,Ren Di-Yuan,Lu Jian,&Cui, JW.(2012).The influence of channel size on total dose irradiation and hot-carrier effects of sub-micro NMOSFET.ACTA PHYSICA SINICA,61(2),-.
MLA Cui Jiang-Wei,et al."The influence of channel size on total dose irradiation and hot-carrier effects of sub-micro NMOSFET".ACTA PHYSICA SINICA 61.2(2012):-.
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