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学科主题: Physics
题名: The influence of channel size on total dose irradiation and hot-carrier effects of sub-micro NMOSFET
作者: Cui Jiang-Wei; Yu Xue-Feng; Ren Di-Yuan; Lu Jian
通讯作者: Cui, JW
关键词: sub-micro ; total dose irradiation ; hot-carrier effect
刊名: ACTA PHYSICA SINICA
发表日期: 2012
卷: 61, 期:2, 页:-
收录类别: SCI
摘要: Total dose irradiation and the hot-carrier damages are two of the important factors for the application of sub-micro and even smaller MOS devices. Therefore, how to prevent the device from being damaged attracts much attention. Total dose irradiation and hot-carrier effects of sub-micro NMOSFET with various channel sizes are studied. Electronic parameters are measured and the results show that though the principles of damages are somewhat similar, the total dose irradiation and the damage behavior and their dependences on the width-to-length(W/L) ratio of channel size for these two effects are different. The most notable damage of radiation lies in the great increase of the off-state leakage current, and the damage increases with W/L reducing. While for hot-carrier effect, several parameters such as trans-conductance change a lot, except for the off-state leakage current. And the damage increases as channel length and channel width decrease. The different damage behaviors and different relations to channel size are attributed to the different location of charges induced. Therefore, different aspects should be considered when the device is hardened against these two effects.
内容类型: 期刊论文
URI标识: http://ir.xjipc.cas.cn/handle/365002/1649
Appears in Collections:新疆维吾尔自治区电子信息材料与器件重点实验室_期刊论文

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作者单位: Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China;Xinjiang Key Lab Elect Informat Mat & Devices, Urumqi 830011, Peoples R China;Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China

Recommended Citation:
Cui Jiang-Wei,Yu Xue-Feng,Ren Di-Yuan,et al. The influence of channel size on total dose irradiation and hot-carrier effects of sub-micro NMOSFET[J]. ACTA PHYSICA SINICA,2012,61(2):-.
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文件名: The influence of channel size on total dose irradiation and hot-carrier effects of sub-micro NMOSFET.pdf
格式: Adobe PDF
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