The influence of channel size on total dose irradiation and hot-carrier effects of sub-micro NMOSFET
Cui Jiang-Wei; Yu Xue-Feng; Ren Di-Yuan; Lu Jian; Cui, JW
2012
Source PublicationACTA PHYSICA SINICA
ISSN1000-3290
Volume61Issue:2Pages:-
Abstract

otal dose irradiation and the hot-carrier damages are two of the important factors for the application of sub-micro and even smaller MOS devices. Therefore, how to prevent the device from being damaged attracts much attention. Total dose irradiation and hot-carrier effects of sub-micro NMOSFET with various channel sizes are studied. Electronic parameters are measured and the results show that though the principles of damages are somewhat similar, the total dose irradiation and the damage behavior and their dependences on the width-to-length(W/L) ratio of channel size for these two effects are different. The most notable damage of radiation lies in the great increase of the off-state leakage current, and the damage increases with W/L reducing. While for hot-carrier effect, several parameters such as trans-conductance change a lot, except for the off-state leakage current. And the damage increases as channel length and channel width decrease. The different damage behaviors and different relations to channel size are attributed to the different location of charges induced. Therefore, different aspects should be considered when the device is hardened against these two effects.

KeywordSub-micro Total Dose Irradiation Hot-carrier Effect
Subject AreaPhysics
Indexed BySCI
WOS IDWOS:000302129500050
Citation statistics
Cited Times:9[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/1649
Collection新疆维吾尔自治区电子信息材料与器件重点实验室
Corresponding AuthorCui, JW
AffiliationChinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China;Xinjiang Key Lab Elect Informat Mat & Devices, Urumqi 830011, Peoples R China;Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China
Recommended Citation
GB/T 7714
Cui Jiang-Wei,Yu Xue-Feng,Ren Di-Yuan,et al. The influence of channel size on total dose irradiation and hot-carrier effects of sub-micro NMOSFET[J]. ACTA PHYSICA SINICA,2012,61(2):-.
APA Cui Jiang-Wei,Yu Xue-Feng,Ren Di-Yuan,Lu Jian,&Cui, JW.(2012).The influence of channel size on total dose irradiation and hot-carrier effects of sub-micro NMOSFET.ACTA PHYSICA SINICA,61(2),-.
MLA Cui Jiang-Wei,et al."The influence of channel size on total dose irradiation and hot-carrier effects of sub-micro NMOSFET".ACTA PHYSICA SINICA 61.2(2012):-.
Files in This Item:
File Name/Size DocType Version Access License
The influence of cha(627KB)期刊论文作者接受稿开放获取CC BY-NC-SAView Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Cui Jiang-Wei]'s Articles
[Yu Xue-Feng]'s Articles
[Ren Di-Yuan]'s Articles
Baidu academic
Similar articles in Baidu academic
[Cui Jiang-Wei]'s Articles
[Yu Xue-Feng]'s Articles
[Ren Di-Yuan]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Cui Jiang-Wei]'s Articles
[Yu Xue-Feng]'s Articles
[Ren Di-Yuan]'s Articles
Terms of Use
No data!
Social Bookmark/Share
File name: The influence of channel size on total dose irradiation and hot-carrier effects of sub-micro NMOSFET.pdf
Format: Adobe PDF
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.