Use the subthreshold-current technique to separate radiation induced defects in gate controlled lateral pnp bipolar transistors
Xi Shan-Bin; Lu Wu; Wang Zhi-Kuan; Ren Di-Yuan; Zhou Dong; Wen Lin; Sun Jing
2012
Source PublicationACTA PHYSICA SINICA
ISSN1000-3290
Volume61Issue:7
Abstract

In this paper, we design and fabricate a new test structure of bipolar device. A gate is deposited on the oxide layer covering the base region of normal lateral pnp bipolar transistor. The characteristic of drain current (collector current) versus the gate voltage is recorded by sweeping the voltage applied to the gate, then the subthreshold-current technique is used to separate the radiation induced oxide trapped charges and interface traps in the gate controlled lateral pnp bipolar transistor during Co-60-gamma irradiation. The test structure and the measurement of the bipolar transistor used in the experiment are introduced in detail in this paper.

KeywordSubthreshold-current Technique Gate Control Lateral Pnp Bipolar Transistor Charge Separation
Subject AreaPhysics
Indexed BySCI
WOS IDWOS:000303029500049
Citation statistics
Cited Times:5[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/1634
Collection新疆维吾尔自治区电子信息材料与器件重点实验室
AffiliationXinjiang Tech Inst Phys & Chem CAS, Urumqi 830011, Peoples R China;Xinjiang Key Lab Elect Informat Mat & Devices, Urumqi 830011, Peoples R China;Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China; State Key Lab Analog Integrated Circuit, Chongqing 400060, Peoples R China
Recommended Citation
GB/T 7714
Xi Shan-Bin,Lu Wu,Wang Zhi-Kuan,et al. Use the subthreshold-current technique to separate radiation induced defects in gate controlled lateral pnp bipolar transistors[J]. ACTA PHYSICA SINICA,2012,61(7).
APA Xi Shan-Bin.,Lu Wu.,Wang Zhi-Kuan.,Ren Di-Yuan.,Zhou Dong.,...&Sun Jing.(2012).Use the subthreshold-current technique to separate radiation induced defects in gate controlled lateral pnp bipolar transistors.ACTA PHYSICA SINICA,61(7).
MLA Xi Shan-Bin,et al."Use the subthreshold-current technique to separate radiation induced defects in gate controlled lateral pnp bipolar transistors".ACTA PHYSICA SINICA 61.7(2012).
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