Use the subthreshold-current technique to separate radiation induced defects in gate controlled lateral pnp bipolar transistors
Xi Shan-Bin; Lu Wu; Wang Zhi-Kuan; Ren Di-Yuan; Zhou Dong; Wen Lin; Sun Jing
2012
发表期刊ACTA PHYSICA SINICA
ISSN1000-3290
卷号61期号:7
摘要

In this paper, we design and fabricate a new test structure of bipolar device. A gate is deposited on the oxide layer covering the base region of normal lateral pnp bipolar transistor. The characteristic of drain current (collector current) versus the gate voltage is recorded by sweeping the voltage applied to the gate, then the subthreshold-current technique is used to separate the radiation induced oxide trapped charges and interface traps in the gate controlled lateral pnp bipolar transistor during Co-60-gamma irradiation. The test structure and the measurement of the bipolar transistor used in the experiment are introduced in detail in this paper.

关键词Subthreshold-current Technique Gate Control Lateral Pnp Bipolar Transistor Charge Separation
学科领域Physics
收录类别SCI
WOS记录号WOS:000303029500049
引用统计
文献类型期刊论文
条目标识符http://ir.xjipc.cas.cn/handle/365002/1634
专题新疆维吾尔自治区电子信息材料与器件重点实验室
作者单位Xinjiang Tech Inst Phys & Chem CAS, Urumqi 830011, Peoples R China;Xinjiang Key Lab Elect Informat Mat & Devices, Urumqi 830011, Peoples R China;Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China; State Key Lab Analog Integrated Circuit, Chongqing 400060, Peoples R China
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Xi Shan-Bin,Lu Wu,Wang Zhi-Kuan,et al. Use the subthreshold-current technique to separate radiation induced defects in gate controlled lateral pnp bipolar transistors[J]. ACTA PHYSICA SINICA,2012,61(7).
APA Xi Shan-Bin.,Lu Wu.,Wang Zhi-Kuan.,Ren Di-Yuan.,Zhou Dong.,...&Sun Jing.(2012).Use the subthreshold-current technique to separate radiation induced defects in gate controlled lateral pnp bipolar transistors.ACTA PHYSICA SINICA,61(7).
MLA Xi Shan-Bin,et al."Use the subthreshold-current technique to separate radiation induced defects in gate controlled lateral pnp bipolar transistors".ACTA PHYSICA SINICA 61.7(2012).
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