XJIPC OpenIR  > 材料物理与化学研究室
research on the total dose irradiation effect of partial-depletion-silicon-on insulator static random access memory
Li Ming; Yu Xue-Feng; Xue Yao-Guo; Lu Jian; Cui Jiang-Wei; Gao Bo
2012
Source PublicationACTA PHYSICA SINICA
ISSN1000-3290
Volume61Issue:10Pages:-
AbstractIn this paper, the changes of electrical parameters and their functional errors with the total radiation dose are studied, when the PDSOI static random access memory (SRAM) is irradiated under different total doses. After the SOI SRAM is irradiated by the Co-60-gamma ray, the total dose radiation damage mechanism and the correlation between the changes of device parameters and function errors are discussed. For the large-scale SOI integrated circuits, this provides a possible method to further study the total dose radiation hardening and the radiation damage assessment of the devices. It is indicated that the increase of current consumption is due mainly to the radiation-induced leakage current from both field oxygen and buried oxide. The drift of threshold voltage creates the decline in output high level, the slight increase in output low level, the significant reduction in peak-peak value, and the increase of transmission delay. When the total dose accumulates and reaches a certain amount of dose, the logic mutation error emerges, resulting in the failure of shutdown function. There is a certain correlation between the transmission delay, the output high and the logic error.
KeywordPartial-depletion-silicon-on Insulator Static Random Access Memory Total-dose Effects Power Supply Current
Subject AreaPhysics
Indexed BySCI
WOS IDWOS:000304976200045
Citation statistics
Cited Times:5[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/1629
Collection材料物理与化学研究室
AffiliationChinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China;Xinjiang Key Lab Elect Informat Mat & Devices, Urumqi 830011, Peoples R China;Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China
Recommended Citation
GB/T 7714
Li Ming,Yu Xue-Feng,Xue Yao-Guo,et al. research on the total dose irradiation effect of partial-depletion-silicon-on insulator static random access memory[J]. ACTA PHYSICA SINICA,2012,61(10):-.
APA Li Ming,Yu Xue-Feng,Xue Yao-Guo,Lu Jian,Cui Jiang-Wei,&Gao Bo.(2012).research on the total dose irradiation effect of partial-depletion-silicon-on insulator static random access memory.ACTA PHYSICA SINICA,61(10),-.
MLA Li Ming,et al."research on the total dose irradiation effect of partial-depletion-silicon-on insulator static random access memory".ACTA PHYSICA SINICA 61.10(2012):-.
Files in This Item:
File Name/Size DocType Version Access License
Research on the tota(858KB)期刊论文作者接受稿开放获取CC BY-NC-SAView Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Li Ming]'s Articles
[Yu Xue-Feng]'s Articles
[Xue Yao-Guo]'s Articles
Baidu academic
Similar articles in Baidu academic
[Li Ming]'s Articles
[Yu Xue-Feng]'s Articles
[Xue Yao-Guo]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Li Ming]'s Articles
[Yu Xue-Feng]'s Articles
[Xue Yao-Guo]'s Articles
Terms of Use
No data!
Social Bookmark/Share
File name: Research on the total dose irradiation effect of partial-depletion-silicon-on insulator static random access memory.pdf
Format: Adobe PDF
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.