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research on the total dose irradiation effect of partial-depletion-silicon-on insulator static random access memory
Li Ming; Yu Xue-Feng; Xue Yao-Guo; Lu Jian; Cui Jiang-Wei; Gao Bo
2012
发表期刊ACTA PHYSICA SINICA
ISSN1000-3290
卷号61期号:10页码:-
摘要In this paper, the changes of electrical parameters and their functional errors with the total radiation dose are studied, when the PDSOI static random access memory (SRAM) is irradiated under different total doses. After the SOI SRAM is irradiated by the Co-60-gamma ray, the total dose radiation damage mechanism and the correlation between the changes of device parameters and function errors are discussed. For the large-scale SOI integrated circuits, this provides a possible method to further study the total dose radiation hardening and the radiation damage assessment of the devices. It is indicated that the increase of current consumption is due mainly to the radiation-induced leakage current from both field oxygen and buried oxide. The drift of threshold voltage creates the decline in output high level, the slight increase in output low level, the significant reduction in peak-peak value, and the increase of transmission delay. When the total dose accumulates and reaches a certain amount of dose, the logic mutation error emerges, resulting in the failure of shutdown function. There is a certain correlation between the transmission delay, the output high and the logic error.
关键词Partial-depletion-silicon-on Insulator Static Random Access Memory Total-dose Effects Power Supply Current
学科领域Physics
收录类别SCI
WOS记录号WOS:000304976200045
引用统计
被引频次:5[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.xjipc.cas.cn/handle/365002/1629
专题材料物理与化学研究室
作者单位Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China;Xinjiang Key Lab Elect Informat Mat & Devices, Urumqi 830011, Peoples R China;Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China
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Li Ming,Yu Xue-Feng,Xue Yao-Guo,et al. research on the total dose irradiation effect of partial-depletion-silicon-on insulator static random access memory[J]. ACTA PHYSICA SINICA,2012,61(10):-.
APA Li Ming,Yu Xue-Feng,Xue Yao-Guo,Lu Jian,Cui Jiang-Wei,&Gao Bo.(2012).research on the total dose irradiation effect of partial-depletion-silicon-on insulator static random access memory.ACTA PHYSICA SINICA,61(10),-.
MLA Li Ming,et al."research on the total dose irradiation effect of partial-depletion-silicon-on insulator static random access memory".ACTA PHYSICA SINICA 61.10(2012):-.
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