Mn-Co-Zn-O体系制备低阻高B型单层片式NTCR
Alternative Titlethe preparation of mn-co-zn oxide for monolayer chip ntc thermistors with low resistance and high b constant
贾素兰; 陈朝阳; 陶明德; 丛秀云
2011
Source Publication功能材料与器件学报
ISSN1007-4252
Volume17Issue:4Pages:355-358
Abstract

研究了Mn-Co-O体系通过掺入适量ZnO,采用最佳的烧结温度,可制备低阻高B型NTCR(负温度系数热敏电阻),并通过XRD、SEM研究了样品Mn1.14Co1.83Zn0.03O4在不同烧结温度下的微观结构和电学特性。结果表明:Mn-Co-Zn-O体系在T=1100~1200℃很宽的温度范围可只存在尖晶石结构,同时具有高的激活能。样品Mn1.14Co1.83Zn0.03O4在烧结温度T=1100℃时存在最小电阻率,而B仍保持在4046K左右。因此,由其制成的单层片式NTCR可替代某些具有内电极的叠层器件。

KeywordNtc热敏电阻 低阻高b 单层片式
Subject AreaEngineering (Provided By Thomson Reuters)
Indexed ByCSCD
CSCD IDCSCD:4280318
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Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/1588
Collection新疆维吾尔自治区电子信息材料与器件重点实验室
Affiliation中国科学院新疆理化技术研究所;新疆电子信息材料与器件重点实验室;中国科学院研究生院;成都西汉电子科技责任有限公司
Recommended Citation
GB/T 7714
贾素兰,陈朝阳,陶明德,等. Mn-Co-Zn-O体系制备低阻高B型单层片式NTCR[J]. 功能材料与器件学报,2011,17(4):355-358.
APA 贾素兰,陈朝阳,陶明德,&丛秀云.(2011).Mn-Co-Zn-O体系制备低阻高B型单层片式NTCR.功能材料与器件学报,17(4),355-358.
MLA 贾素兰,et al."Mn-Co-Zn-O体系制备低阻高B型单层片式NTCR".功能材料与器件学报 17.4(2011):355-358.
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