Alternative Titletheorical model of enhanced low dose rate sensitivity observed in p-type metal-oxide-semiconductor field-effect transistor
高博; 余学峰; 任迪远; 崔江维; 兰博; 李明; 王义元
Source Publication物理学报


Other Abstract

In this paper,the ionizing damage effects and the annealing behaviors of an import producti,p-type metal-oxide-semiconductor field-effect transistor(PMOSFET),an unhardened 4007 circuit under different doses are investigated.We measure the sub-threshold I-V characteristic curves of PMOSFET under different bias doses.The dependence of the drift of threshold voltage on total dose is discussed.We also observe the relationship between the parameter and the annealing time.The experiment results show that the PMOSFET of this kind can enhance low dose rate sensitivity(ELDRS)effect.The interface-trap formation by H+ transmission in the SiO2 is explained.We believe that the interface trap is a primary reason to induce ELDRS effect of PMOSFET.We also discuss the physical model of enhancing low dose rate sensitivity effect of PMOSFET.

KeywordP型金属氧化物半导体场效应晶体管 60coγ射线 电离辐射损伤 低剂量率辐射损伤增强效应
Subject AreaEngineering (Provided By Thomson Reuters)
Indexed BySCI ; CSCD
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Document Type期刊论文
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GB/T 7714
高博,余学峰,任迪远,等. p型金属氧化物半导体场效应晶体管低剂量率辐射损伤增强效应模型研究[J]. 物理学报,2011,60(6):812-818.
APA 高博.,余学峰.,任迪远.,崔江维.,兰博.,...&王义元.(2011).p型金属氧化物半导体场效应晶体管低剂量率辐射损伤增强效应模型研究.物理学报,60(6),812-818.
MLA 高博,et al."p型金属氧化物半导体场效应晶体管低剂量率辐射损伤增强效应模型研究".物理学报 60.6(2011):812-818.
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