中带电压法分离栅控横向pnp双极晶体管辐照感生缺陷
Alternative Titleuse the subthreshold-current technique to separate radiation induced defects in gate controlled lateral pnp bipolar transistors
席善斌; 陆妩; 王志宽; 任迪远; 周东; 文林; 孙静
2012
Source Publication物理学报
ISSN1000-3290
Volume61Issue:7Pages:350-355
Abstract

设计并制作了一种新型双极测试结构,即在常规横向pnp双极晶体管基区表面氧化层上淀积一栅电极,通过扫描栅极所加电压,获得漏极(集电极)电流随栅极电压的变化特性,利用中带电压法分离栅控横向pnp双极晶体管在辐照过程中感生的氧化物陷阱电荷和界面陷阱电荷.本文对设计的晶体管测试结构和采用的测试方法做了具体介绍.

Keyword中带电压法 栅控 横向pnp双极晶体管 电荷分离
Indexed BySCI ; CSCD
CSCD IDCSCD:4561555
Citation statistics
Cited Times:2[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/1494
Collection新疆维吾尔自治区电子信息材料与器件重点实验室
材料物理与化学研究室
Affiliation中国科学院新疆理化技术研究所;新疆电子信息材料与器件重点实验室;中国科学院研究生院;模拟集成电路国家重点实验室
Recommended Citation
GB/T 7714
席善斌,陆妩,王志宽,等. 中带电压法分离栅控横向pnp双极晶体管辐照感生缺陷[J]. 物理学报,2012,61(7):350-355.
APA 席善斌.,陆妩.,王志宽.,任迪远.,周东.,...&孙静.(2012).中带电压法分离栅控横向pnp双极晶体管辐照感生缺陷.物理学报,61(7),350-355.
MLA 席善斌,et al."中带电压法分离栅控横向pnp双极晶体管辐照感生缺陷".物理学报 61.7(2012):350-355.
Files in This Item:
File Name/Size DocType Version Access License
中带电压法分离栅控横向pnp双极晶体管辐(626KB)期刊论文作者接受稿开放获取CC BY-NC-SAView Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[席善斌]'s Articles
[陆妩]'s Articles
[王志宽]'s Articles
Baidu academic
Similar articles in Baidu academic
[席善斌]'s Articles
[陆妩]'s Articles
[王志宽]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[席善斌]'s Articles
[陆妩]'s Articles
[王志宽]'s Articles
Terms of Use
No data!
Social Bookmark/Share
File name: 中带电压法分离栅控横向pnp双极晶体管辐照感生缺陷.pdf
Format: Adobe PDF
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.