中国科学院新疆理化技术研究所机构知识库
Advanced  
XJIPC OpenIR  > 材料物理与化学研究室  > 期刊论文
题名: radiation response of npn bipolar transistors at various emitter junction biases
作者: Fei Wu-Xiong; Lu Wu; Ren Di-Yuan; Zheng Yu-Zhan; Wang Yi-Yuan; Chen Rui; Wang Zhi-Kuan; Yang Yong-Hui; Li Mao-Shun; Lan Bo; Cui Jiang-Wei; Zhao Yun
关键词: NPN bipolar transistor ; 60Co gamma irradiation ; bias ; enhanced low dose rate sensitivity
刊名: Yuanzineng Kexue Jishu/Atomic Energy Science and Technology
发表日期: 2011
卷: 45, 期:2, 页:217-222
摘要: 对NPN双极晶体管进行了不同剂量率、不同偏置条件下的电离辐射实验。研究结果表明:同一剂量率辐照时,无论是低剂量率还是高剂量率,辐照损伤均是基-射结反向偏置时最大,零偏置次之,正偏置最小。NPN双极晶体管在3种偏置下均可观察到明显的低剂量率辐照损伤增强(ELDRS)效应,且偏置条件对ELDRS效应很明显,表现为基-射结正向偏置ELDRS效应最为显著,零偏次之,反向偏置最次。对出现这一实验结果的机理进行了探讨。
英文摘要: At various dose rates, ionizing radiation response of NPN bipolar transistors at three kinds of base-emitter junction biases was investigated. The results show that the radiation damages are most significant at base-emitter junction reverse bias and minimal at forward bias when irradiated at high or low dose rate. Furthermore, the radiation damage is more severe at low dose rate for the same bias, i.e. enhanced low dose rate sensitivity (ELDRS). The influence of base-emitter junction bias on ELDRS effect is obvious. The ELDRS effect is most significant for base-emitter junction forward bias, while it is least for reverse bias. The mechanisms of these results were discussed.
内容类型: 期刊论文
URI标识: http://ir.xjipc.cas.cn/handle/365002/1455
Appears in Collections:材料物理与化学研究室_期刊论文

Files in This Item:
File Name/ File Size Content Type Version Access License
Radiation Response of NPN Bipolar Transistors at Various Emitter Junction Biases.pdf(455KB)期刊论文作者接受稿开放获取View 联系获取全文

作者单位: Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi, Xinjiang 830011, China;National Key Laboratory of Analog Integrated Circuit, Chongqing 400060

Recommended Citation:
Fei Wu-Xiong,Lu Wu,Ren Di-Yuan,et al. radiation response of npn bipolar transistors at various emitter junction biases[J]. Yuanzineng Kexue Jishu/Atomic Energy Science and Technology,2011,45(2):217-222.
Service
Recommend this item
Sava as my favorate item
Show this item's statistics
Export Endnote File
Google Scholar
Similar articles in Google Scholar
[Fei Wu-Xiong]'s Articles
[Lu Wu]'s Articles
[Ren Di-Yuan]'s Articles
CSDL cross search
Similar articles in CSDL Cross Search
[Fei Wu-Xiong]‘s Articles
[Lu Wu]‘s Articles
[Ren Di-Yuan]‘s Articles
Related Copyright Policies
Null
Social Bookmarking
Add to CiteULike Add to Connotea Add to Del.icio.us Add to Digg Add to Reddit
文件名: Radiation Response of NPN Bipolar Transistors at Various Emitter Junction Biases.pdf
格式: Adobe PDF
所有评论 (0)
暂无评论
 
评注功能仅针对注册用户开放,请您登录
您对该条目有什么异议,请填写以下表单,管理员会尽快联系您。
内 容:
Email:  *
单位:
验证码:   刷新
您在IR的使用过程中有什么好的想法或者建议可以反馈给我们。
标 题:
 *
内 容:
Email:  *
验证码:   刷新

Items in IR are protected by copyright, with all rights reserved, unless otherwise indicated.

 

 

Valid XHTML 1.0!
Powered by CSpace