中国科学院新疆理化技术研究所机构知识库
Advanced  
XJIPC OpenIR  > 新疆维吾尔自治区电子信息材料与器件重点实验室  > 期刊论文
学科主题: Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering
题名: Effects of raw materials on microstructure and dielectric properties of PbZrO3 antiferroelectric thin films prepared via sol-gel process
作者: Liu Yunying; Hao Xihong; Zhou Jing; Xu Jinbao; An Shengli
关键词: Electronic materials ; Chemical synthesis ; Microstructure ; Dielectric response
刊名: Journal of Alloys and Compounds
发表日期: 2011
卷: 509, 期:35, 页:8779-8782
收录类别: SCI
英文摘要: In this work, we report on two kinds of PbZrO3 (PZO) antiferroelectric (AFE) thin films with a thickness of about 700 nm, which were fabricated by using zirconium isopropoxide and zirconium nitrate as starting materials, respectively. The effects of the raw materials on microstructure and electrical properties of the PZO AFE films were studied in detail. X-ray diffraction and scanning electron microcopy results showed that the PZO films obtained from zirconium isopropoxide were highly (1 1 1)-oriented and had a more uniform surface microstructure. As a result, the PZO films from zirconium isopropoxide accordingly displayed better electrical properties, such as lager dielectric constant, increased saturated polarization, and smaller leakage current.
内容类型: 期刊论文
URI标识: http://ir.xjipc.cas.cn/handle/365002/1421
Appears in Collections:新疆维吾尔自治区电子信息材料与器件重点实验室_期刊论文

Files in This Item:
File Name/ File Size Content Type Version Access License
effects of raw materials on microstructure and dielectric properties of pbzro3 antiferroelectric thin films prepared via sol-gel process.pdf(589KB)期刊论文作者接受稿开放获取View 联系获取全文

作者单位: Inner Mongolia Univ Sci & Technol, Sch Met & Mat, Baotou 014010, Peoples R China;Inner Mongolia Univ Sci & Technol, Sch Chem & Chem Engn, Baotou 014010, Peoples R China;Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China;Chinese Acad Sci, Xinjiang Key Lab Elect Informat Mat & Devices, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China

Recommended Citation:
Liu Yunying,Hao Xihong,Zhou Jing,et al. Effects of raw materials on microstructure and dielectric properties of PbZrO3 antiferroelectric thin films prepared via sol-gel process[J]. Journal of Alloys and Compounds,2011,509(35):8779-8782.
Service
Recommend this item
Sava as my favorate item
Show this item's statistics
Export Endnote File
Google Scholar
Similar articles in Google Scholar
[Liu Yunying]'s Articles
[Hao Xihong]'s Articles
[Zhou Jing]'s Articles
CSDL cross search
Similar articles in CSDL Cross Search
[Liu Yunying]‘s Articles
[Hao Xihong]‘s Articles
[Zhou Jing]‘s Articles
Related Copyright Policies
Null
Social Bookmarking
Add to CiteULike Add to Connotea Add to Del.icio.us Add to Digg Add to Reddit
文件名: effects of raw materials on microstructure and dielectric properties of pbzro3 antiferroelectric thin films prepared via sol-gel process.pdf
格式: Adobe PDF
所有评论 (0)
暂无评论
 
评注功能仅针对注册用户开放,请您登录
您对该条目有什么异议,请填写以下表单,管理员会尽快联系您。
内 容:
Email:  *
单位:
验证码:   刷新
您在IR的使用过程中有什么好的想法或者建议可以反馈给我们。
标 题:
 *
内 容:
Email:  *
验证码:   刷新

Items in IR are protected by copyright, with all rights reserved, unless otherwise indicated.

 

 

Valid XHTML 1.0!
Powered by CSpace