Effects of raw materials on microstructure and dielectric properties of PbZrO3 antiferroelectric thin films prepared via sol-gel process
Liu Yunying; Hao Xihong; Zhou Jing; Xu Jinbao; An Shengli
2011
Source PublicationJournal of Alloys and Compounds
ISSN9258388
Volume509Issue:35Pages:8779-8782
Abstract

In this work, we report on two kinds of PbZrO3 (PZO) antiferroelectric (AFE) thin films with a thickness of about 700 nm, which were fabricated by using zirconium isopropoxide and zirconium nitrate as starting materials, respectively. The effects of the raw materials on microstructure and electrical properties of the PZO AFE films were studied in detail. X-ray diffraction and scanning electron microcopy results showed that the PZO films obtained from zirconium isopropoxide were highly (1 1 1)-oriented and had a more uniform surface microstructure. As a result, the PZO films from zirconium isopropoxide accordingly displayed better electrical properties, such as lager dielectric constant, increased saturated polarization, and smaller leakage current.

KeywordElectronic Materials Chemical Synthesis Microstructure Dielectric Response
Subject AreaChemistry ; Materials Science ; Metallurgy & Metallurgical Engineering
DOI10.1016/j.jallcom.2011.06.067
Indexed BySCI
WOS IDWOS:000293824600030
Citation statistics
Cited Times:2[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/1421
Collection新疆维吾尔自治区电子信息材料与器件重点实验室
AffiliationInner Mongolia Univ Sci & Technol, Sch Met & Mat, Baotou 014010, Peoples R China;Inner Mongolia Univ Sci & Technol, Sch Chem & Chem Engn, Baotou 014010, Peoples R China;Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China;Chinese Acad Sci, Xinjiang Key Lab Elect Informat Mat & Devices, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China
Recommended Citation
GB/T 7714
Liu Yunying,Hao Xihong,Zhou Jing,et al. Effects of raw materials on microstructure and dielectric properties of PbZrO3 antiferroelectric thin films prepared via sol-gel process[J]. Journal of Alloys and Compounds,2011,509(35):8779-8782.
APA Liu Yunying,Hao Xihong,Zhou Jing,Xu Jinbao,&An Shengli.(2011).Effects of raw materials on microstructure and dielectric properties of PbZrO3 antiferroelectric thin films prepared via sol-gel process.Journal of Alloys and Compounds,509(35),8779-8782.
MLA Liu Yunying,et al."Effects of raw materials on microstructure and dielectric properties of PbZrO3 antiferroelectric thin films prepared via sol-gel process".Journal of Alloys and Compounds 509.35(2011):8779-8782.
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