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学科主题: Materials Science
题名: phase transformation properties of highly (100)-oriented plzst 2/85/12/3 antiferroelectric thin films deposited on nb-srtio3 single-crystal substrates
作者: Hao Xihong; Zhai Jiwei; Yue Zhenxing; Xu Jinbao
关键词: Antiferroelectricity ; Lead ; Scanning electron microscopy ; Single crystals ; Strontium alloys ; Strontium titanates ; Thin films ; Tin ; X ray diffraction ; Zirconium
刊名: Journal of the American Ceramic Society
发表日期: 2011
DOI: 10.1111/j.1551-2916.2011.04736.x
卷: 94, 期:9, 页:2816-2818
收录类别: SCI
摘要: In this work, (Pb0.97La0.02)(Zr0.85Sn 0.12Ti0.03)O3 (PLZST 2/85/12/3) antiferroelectric (AFE) thin films with a thickness of ∼700 nm were successfully fabricated on (100)-oriented Nb-SrTiO3 single crystal via a sol-gel technique. X-ray diffraction and scanning electron microscopy results showed that the obtained AFE films had a highly (100)-preferred orientation and displayed a uniform surface microstructure. Electrical measurements, such as P-E loops, the electric-field, and temperature-dependent dielectric properties, demonstrated a mixture of AFE and FE phases in PLZST 2/85/12/3 films deposited on Nb-SrTiO3 substrates. © 2011 The American Ceramic Society.
英文摘要: In this work, (Pb0.97La0.02)(Zr0.85Sn 0.12Ti0.03)O3 (PLZST 2/85/12/3) antiferroelectric (AFE) thin films with a thickness of ∼700 nm were successfully fabricated on (100)-oriented Nb-SrTiO3 single crystal via a sol-gel technique. X-ray diffraction and scanning electron microscopy results showed that the obtained AFE films had a highly (100)-preferred orientation and displayed a uniform surface microstructure. Electrical measurements, such as P-E loops, the electric-field, and temperature-dependent dielectric properties, demonstrated a mixture of AFE and FE phases in PLZST 2/85/12/3 films deposited on Nb-SrTiO3 substrates. © 2011 The American Ceramic Society.
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内容类型: 期刊论文
URI标识: http://ir.xjipc.cas.cn/handle/365002/1416
Appears in Collections:新疆维吾尔自治区电子信息材料与器件重点实验室_期刊论文

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作者单位: Tongji Univ, Funct Mat Res Lab, Shanghai 200092, Peoples R China;Inner Mongolia Univ Sci & Technol, Sch Mat & Met, Baotou 014010, Peoples R China;Tsinghua Univ, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China;Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Xinjiang Key Lab Elect Informat Mat & Devices, Urumqi 830011, Peoples R China

Recommended Citation:
Hao Xihong,Zhai Jiwei,Yue Zhenxing,et al. phase transformation properties of highly (100)-oriented plzst 2/85/12/3 antiferroelectric thin films deposited on nb-srtio3 single-crystal substrates[J]. Journal of the American Ceramic Society,2011,94(9):2816-2818.
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