静态随机存储器总剂量辐射及退火效应研究
Alternative Titleresearch on total dose irradiation and annealing effect of static random access memory
李明; 余学峰; 许发月; 李茂顺; 高博; 崔江维; 周东; 席善斌; 王飞
2012
Source Publication原子能科学技术
ISSN1000-6931
Volume46Issue:4Pages:507-512
Abstract

通过比较1 Mbit商用静态随机存储器(SRAM)在6种不同偏置条件下器件参数(静态和动态功耗电流)和功能参数(错误数)随辐射总剂量、退火时间的变化规律,研究了不同工作状态对辐射损伤的影响,以及不同偏置和温度(25℃和100℃)条件下的退火机制.结果表明:不同偏置对器件参数和功能退化及退火恢复有较大影响;静态和动态功耗电流为器件的敏感参数,在静态偏置条件下器件的辐射损伤最严重.

Other Abstract

By comparing changes of device parameters (standby and operating power supply currents) and functional parameters (errors) with the total radiation dose and annealing time for 1 Mbit commercial static random access memory (SRAM) under the six biases, impacts of the different working conditions on radiation damage and annealing at the different biases and temperatures (25°C and 100°C) were investigated. The different biases have great influence on the degradation and annealing recovery of functions and parameters of the device. Standby and operating power supply currents are sensitive parameters of the device. Radiation damage in device under the static biases is the most serious.

Keyword静态随机存储器 总剂量效应 功耗电流 退火效应
Indexed ByCSCD
CSCD IDCSCD:4528564
Citation statistics
Cited Times:3[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/1366
Collection新疆维吾尔自治区电子信息材料与器件重点实验室
材料物理与化学研究室
Affiliation中国科学院新疆理化技术研究所;新疆电子信息材料与器件重点实验室;中国科学院研究生院
Recommended Citation
GB/T 7714
李明,余学峰,许发月,等. 静态随机存储器总剂量辐射及退火效应研究[J]. 原子能科学技术,2012,46(4):507-512.
APA 李明.,余学峰.,许发月.,李茂顺.,高博.,...&王飞.(2012).静态随机存储器总剂量辐射及退火效应研究.原子能科学技术,46(4),507-512.
MLA 李明,et al."静态随机存储器总剂量辐射及退火效应研究".原子能科学技术 46.4(2012):507-512.
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