学科主题: Materials Science
题名: Effects of PbO insert layer on the microstructure and energy storage performance of (042)-preferred PLZT antiferroelectric thick films
作者: Wang Ying; Hao Xihong; Xu Jinbao
刊名: Journal of Materials Research
卷: 27, 13, 1770-1775
摘要: Two-micrometer-thick Pb0.97La0.02(Zr 0.98Ti0.02)O3 (PLZT) antiferroelectric films, with the addition of different PbO insert layer, were successfully fabricated on LaNiO3/Si substrates through a sol-gel method, and their microstructure and the energy storage performance were investigated in detail. X-ray diffraction curves and scanning electron microscopy images indicated that all the PLZT films showed a strong (042)-preferred orientation and had a uniform surface microstructure. The electrical measurements illustrated that the capacitive density and saturation polarization values of the thick films were improved by the PbO insert layer. As a result, PLZT thick films with 0.4-M/L PbO-insert layer possessed an enhanced energy storage density and energy storage efficiency, which were 25.2 J/cm 3 and 52.3% measured at 984 kV/cm, respectively. Moreover, after 10 6 switching, the Jreco values of the corresponding films were only declined from 17.5 to 16.1 J/cm 3, indicating good fatigue endurance. © 2012 Materials Research Society.
Appears in Collections: 新疆维吾尔自治区电子信息材料与器件重点实验室_期刊论文
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作者单位: Inner Mongolia Univ Sci & Technol, Sch Met & Mat, Baotou 014010, Peoples R China;Chinese Acad Sci, Xinjiang Key Lab Elect Informat Mat & Devices, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China
Wang Ying,Hao Xihong,Xu Jinbao. Effects of PbO insert layer on the microstructure and energy storage performance of (042)-preferred PLZT antiferroelectric thick films[J]. Journal of Materials Research,2012,27(13):1770-1775.